公开(公告)号：US3930065A

公开(公告)日：1975-12-30

申请号：US41343973

申请日：1973-11-07

Applicant: NAT RES DEV

Inventor： BAKER IAN MARTIN ,  BEYNON JOHN DAVID EMRYS ,  ROBERTS PETER CHRISTOPHER TUDO

IPC: H01L21/8234 ,  H01L23/482 ,  H01L29/768 ,  B44D1/18

CPC classification number: H01L21/823406 ,  H01L23/4824 ,  H01L29/76883 ,  H01L2924/0002 ,  Y10S148/143 ,  Y10S438/944 ,  Y10S438/981 ,  H01L2924/00

Abstract: A method of depositing material on a surface with narrow gaps in the deposited material at predetermined positions is described. Projections are formed in the surface and material to be deposited is projected on to the surface from a direction which casts ''shadows'' of the projections where gaps are required. The method is particularly useful in making semi-conductor chargecoupled devices so the material may be electrode material deposited in a vacuum by vacuum deposition. Charge-coupled devices made according to the method are also described.

Abstract translation: 描述了在预定位置上在沉积材料中在具有窄间隙的表面上沉积材料的方法。 在表面上形成突起，并且将要沉积的材料从需要间隙的突起的“阴影”的方向投影到表面上。 该方法在制造半导体电荷耦合器件中特别有用，因此材料可以是通过真空沉积在真空中沉积的电极材料。 还描述了根据该方法制造的电荷耦合器件。