公开(公告)号：US20150255308A1

公开(公告)日：2015-09-10

申请号：US14314041

申请日：2014-06-25

Applicant: NATIONAL TAIWAN UNIVERSITY

Inventor： CHING-FUH LIN ,  Yu-Wen CHENG ,  Yu-Zhong LIN

IPC: H01L21/324 ,  C25D7/12 ,  H01L21/02

CPC classification number: H01L21/3245 ,  B81C1/00365 ,  B81C2201/0169 ,  C25D9/04 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/02631 ,  H01L21/02658

Abstract: An embodiment discloses a method for modulating stress of a semiconductor film and comprises the steps of: providing a substrate; forming a semiconductor film on the substrate; performing an annealing treatment to the formed semiconductor film; and determining a residual stress of the semiconductor film at a certain compress strain, a certain tensile strain, or zero by controlling a temperature of the annealing treatment.

Abstract translation: 实施例公开了一种用于调制半导体膜的应力的方法，包括以下步骤：提供衬底; 在基板上形成半导体膜; 对形成的半导体膜进行退火处理; 并且通过控制退火处理的温度来确定在某一压缩应变，一定的拉伸应变或零点处的半导体膜的残余应力。