公开(公告)号：US09688528B2

公开(公告)日：2017-06-27

申请号：US14970933

申请日：2015-12-16

Applicant: FUJIFILM Corporation

Inventor： Takahiro Sano ,  Takayuki Naono

IPC: H04R17/00 ,  B81B3/00 ,  G01C19/56 ,  G01P15/09 ,  H03H9/17 ,  H04R17/10 ,  H01L41/08 ,  H01L41/113 ,  H01L41/319 ,  H04R31/00 ,  B81C1/00 ,  H03H3/02 ,  H03H3/04 ,  G01P15/08

CPC classification number: B81B3/0072 ,  B81B2203/0127 ,  B81B2203/0353 ,  B81B2203/04 ,  B81C1/00666 ,  B81C2201/0112 ,  B81C2201/0169 ,  B81C2201/017 ,  B81C2201/0176 ,  G01C19/56 ,  G01P15/09 ,  G01P2015/084 ,  H01L41/0815 ,  H01L41/1138 ,  H01L41/319 ,  H03H9/17 ,  H03H2003/027 ,  H03H2003/0414 ,  H04R17/10 ,  H04R31/00 ,  H04R2201/003

Abstract: A producing method for a diaphragm-type resonant MEMS device includes forming a first silicon oxide film, forming a second silicon oxide film, forming a lower electrode, forming a piezoelectric film, forming an upper electrode, laminating the first silicon oxide film, the second silicon oxide film, the lower electrode, the piezoelectric film, and the upper electrode in this order on a first surface of a silicon substrate, and etching the opposite side surface of the first surface of the silicon substrate by deep reactive ion etching to form a diaphragm structure, in which the proportion R2 of the film thickness t2 of the second silicon oxide film with respect to the sum of the film thickness t1 of the first silicon oxide film and the film thickness t2 of the second silicon oxide film satisfies the following condition: 0.10 μm≦t1≦2.00 μm; and R2≧0.70.

公开(公告)号：US20160016792A1

公开(公告)日：2016-01-21

申请号：US14873091

申请日：2015-10-01

Applicant: STMicroelectronics, Inc.

Inventor： Ming Fang

IPC: B81C1/00

CPC classification number: B81C1/00666 ,  B81B7/0029 ,  B81B2203/0181 ,  B81C1/0019 ,  B81C2201/0169 ,  B81C2201/112

Abstract: A method of manufacturing microstructures, such as MEMS or NEMS devices, including forming a protective layer on a surface of a moveable component of the microstructure. For example, a silicide layer may be formed on a portion of at least four different surfaces of a poly-silicon mass that is moveable with respect to a substrate of the microstructure. The process may be self-aligning.

Abstract translation: 一种制造微结构的方法，例如MEMS或NEMS器件，包括在微结构的可移动部件的表面上形成保护层。 例如，可以在可相对于微结构的基板移动的多晶硅块的至少四个不同表面的一部分上形成硅化物层。 该过程可以是自对准的。

公开(公告)号：US08975104B2

公开(公告)日：2015-03-10

申请号：US14185160

申请日：2014-02-20

Applicant: The Royal Institution for the Advancement of Learning/McGill University

Inventor： Mourad El-Gamal ,  Frederic Nabki ,  Paul-Vahe Cicek

IPC: H01L21/00 ,  H01L27/14 ,  B81C1/00 ,  B81B3/00 ,  B81B7/00

CPC classification number: B81C1/00666 ,  B81B3/0021 ,  B81B7/008 ,  B81B2201/01 ,  B81B2201/0235 ,  B81B2201/0271 ,  B81B2201/03 ,  B81B2207/015 ,  B81B2207/03 ,  B81C1/00063 ,  B81C1/00246 ,  B81C1/00396 ,  B81C1/00587 ,  B81C2201/014 ,  B81C2201/0169 ,  B81C2201/0174 ,  B81C2203/0721 ,  B81C2203/0735

Abstract: A method of providing microelectromechanical structures (MEMS) that are compatible with silicon CMOS electronics is provided. The method providing for processes and manufacturing sequences limiting the maximum exposure of an integrated circuit upon which the MEMS is manufactured to below 350° C., and potentially to below 250° C., thereby allowing direct manufacturing of the MEMS devices onto electronics, such as Si CMOS circuits. The method further providing for the provisioning of MEMS devices with multiple non-conductive structural layers such as silicon carbide separated with small lateral gaps. Such silicon carbide structures offering enhanced material properties, increased environmental and chemical resilience while also allowing novel designs to be implemented taking advantage of the non-conductive material of the structural layer. The use of silicon carbide being beneficial within the formation of MEMS elements such as motors, gears, rotors, translation drives, etc where increased hardness reduces wear of such elements during operation.

Abstract translation: 提供了一种提供与硅CMOS电子器件兼容的微机电结构（MEMS）的方法。 该方法提供了将MEMS制造的集成电路的最大曝光限制在低于350℃并可能低于250℃的工艺和制造顺序，从而允许将MEMS器件直接制造到电子器件上，例如 作为Si CMOS电路。 该方法进一步提供具有多个非导电结构层的MEMS器件，例如用小的侧向间隙分离的碳化硅。 这种碳化硅结构提供了增强的材料性能，增加了环境和化学弹性，同时还允许利用结构层的非导电材料实现新颖的设计。 在形成MEMS元件（例如马达，齿轮，转子，平移驱动器等）中使用碳化硅是有益的，其中增加的硬度降低了操作期间这些元件的磨损。

公开(公告)号：US20120161573A1

公开(公告)日：2012-06-28

申请号：US12979160

申请日：2010-12-27

Applicant: Ming Fang

Inventor： Ming Fang

IPC: H02N1/00 ,  B05D5/12

CPC classification number: B81C1/00666 ,  B81B7/0029 ,  B81B2203/0181 ,  B81C1/0019 ,  B81C2201/0169 ,  B81C2201/112

Abstract: A method of manufacturing microstructures, such as MEMS or NEMS devices, including forming a protective layer on a surface of a moveable component of the microstructure. For example, a silicide layer may be formed on one or more surfaces of a poly-silicon mass that is moveable with respect to a substrate of the microstructure. The process may be self-aligning.

Abstract translation: 一种制造微结构的方法，例如MEMS或NEMS器件，包括在微结构的可移动部件的表面上形成保护层。 例如，可以在可相对于微结构的基板移动的多晶硅块的一个或多个表面上形成硅化物层。 该过程可以是自对准的。

公开(公告)号：US20030180981A1

公开(公告)日：2003-09-25

申请号：US10344006

申请日：2003-02-13

Inventor： Kiyoshi Ishibashi ,  Makio Horikawa ,  Mika Okumura ,  Masaaki Aoto ,  Daisuku Yoshida ,  Hirofumi Takakura

IPC: H01L021/00 ,  H01L027/14 ,  H01L029/82

CPC classification number: B81C1/00666 ,  B81B2201/0235 ,  B81C2201/0164 ,  B81C2201/0169 ,  G01P15/125 ,  G01P2015/0814 ,  H01G4/33 ,  H01G5/16

Abstract: The present invention relates to a thin-film structural body formed by using a semiconductor processing technique and a manufacturing method thereof, and particularly in a thin-film structural body constituting a semiconductor acceleration sensor and a manufacturing method thereof, an object of the present invention is to provide a thin-film structural body which allows the thin-film member to be easily stress-controlled, and easily makes the film-thickness of the thin-film member thicker, and a manufacturing method thereof. In order to achieve the above-mentioned object, a thin-film member (8) which forms a mass body (3), beams (7) and fixed electrodes (5) of the semiconductor acceleration sensor is constituted by a plurality of doped polysilicon thin-films (33, 35) that are laminated by performing a step of film deposition of polysilicon while, for example, phosphorous is being doped as impurities plural times.

Abstract translation: 本发明涉及通过使用半导体加工技术及其制造方法形成的薄膜结构体，特别涉及构成半导体加速度传感器的薄膜结构体及其制造方法，本发明的目的在于， 是提供一种允许薄膜构件容易受应力控制的薄膜结构体，并且容易使薄膜构件的膜厚变厚，及其制造方法。 为了实现上述目的，形成质量体（3）的薄膜部件（8），半导体加速度传感器的光束（7）和固定电极（5）由多个掺杂多晶硅 通过进行多晶硅的成膜步骤而层叠的薄膜（33,35），而例如将多个磷作为杂质掺杂多次。

公开(公告)号：US06450025B1

公开(公告)日：2002-09-17

申请号：US09499020

申请日：2000-02-04

Applicant: Hiroyuki Wado ,  Yoshinori Otsuka ,  Eishi Kawasaki

Inventor： Hiroyuki Wado ,  Yoshinori Otsuka ,  Eishi Kawasaki

IPC: G01F168

CPC classification number: B81B3/0072 ,  B81B2201/0292 ,  B81C2201/0169 ,  B81C2201/019 ,  G01F1/6845 ,  H05B3/12 ,  H05B3/28 ,  H05B2203/013 ,  H05B2203/017

Abstract: An airflow sensor including a micro-heater having a film structure, which can reduce a warpage of the film structure even when a thick ness of the film structure to improve a mechanical strength thereof. An airflow sensor is provided with a monocrystalline silicon substrate having a hollow portion therein; a thin film heater portion as a micro-heater arranged above the hollow portion; and a temperature sensor. The thin film heater portion has a laminated structure of a lower thin film, a heater layer, and an upper thin film. The lower and the upper thin film respectively have a tensile stress film and a compressive stress film laminated with the tensile stress film, and are symmetry laminated with respect to the heater layer. The tensile stress film is made up of a Si3N4 film having a great moisture-proof characteristic; and the compressive stress film is made up of a SiO2 film having a great adhesion. Since these stress films cancel their internal stress each other, the internal stress can be released, and a warpage moment can be cancelled so that a warpage of the whole film structure can be restricted. Therefore, the mechanical strength can be improved even if the thickness of the film is increased.

Abstract translation: 一种气流传感器，包括具有膜结构的微加热器，即使当膜结构的厚度提高时，也能够减小膜结构的翘曲，从而提高其机械强度。 气流传感器设置有在其中具有中空部分的单晶硅衬底; 作为布置在中空部分上方的微加热器的薄膜加热器部分; 和温度传感器。 薄膜加热器部分具有下薄膜，加热器层和上薄膜的层压结构。 下薄膜和上薄膜分别具有拉伸应力膜和与拉伸应力膜层压的压缩应力膜，并且相对于加热器层对称地层压。 拉伸应力膜由具有良好防潮特性的Si 3 N 4膜构成; 并且压应力膜由具有很大粘附性的SiO 2膜构成。 由于这些应力膜相互抵消其内部应力，因此可以解除内部应力，并且可以消除翘曲力矩，从而可以限制整个膜结构的翘曲。 因此，即使膜的厚度增加，也可以提高机械强度。

公开(公告)号：US06251699B1

公开(公告)日：2001-06-26

申请号：US09617175

申请日：2000-07-17

Applicant: Matthias Fuertsch ,  Michael Offenberg

Inventor： Matthias Fuertsch ,  Michael Offenberg

IPC: H01L2100

CPC classification number: B81C1/00666 ,  B81B2203/0118 ,  B81C2201/0109 ,  B81C2201/0164 ,  B81C2201/0169

Abstract: A method for fabricating micromechanical components, which provides for depositing one or a plurality of sacrificial layers on a silicon substrate and, thereon, a silicon layer. In subsequent method steps, a structure is patterned out of the silicon layer, and the sacrificial layer is removed, at least under one section of the structure. The silicon layer is doped by an implantation process.

Abstract translation: 一种用于制造微机械部件的方法，其提供在硅衬底上以及其上的硅层上沉积一个或多个牺牲层。 在随后的方法步骤中，从硅层图案化结构，并且至少在该结构的一个部分处去除牺牲层。 通过注入工艺掺杂硅层。

公开(公告)号：US20160107880A1

公开(公告)日：2016-04-21

申请号：US14970933

申请日：2015-12-16

Applicant: FUJIFILM Corporation

Inventor： Takahiro SANO ,  Takayuki NAONO

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0072 ,  B81B2203/0127 ,  B81B2203/0353 ,  B81B2203/04 ,  B81C1/00666 ,  B81C2201/0112 ,  B81C2201/0169 ,  B81C2201/017 ,  B81C2201/0176 ,  G01C19/56 ,  G01P15/09 ,  G01P2015/084 ,  H01L41/0815 ,  H01L41/1138 ,  H01L41/319 ,  H03H9/17 ,  H03H2003/027 ,  H03H2003/0414 ,  H04R17/10 ,  H04R31/00 ,  H04R2201/003

Abstract: A producing method for a diaphragm-type resonant MEMS device includes forming a first silicon oxide film, forming a second silicon oxide film, forming a lower electrode, forming a piezoelectric film, forming an upper electrode, laminating the first silicon oxide film, the second silicon oxide film, the lower electrode, the piezoelectric film, and the upper electrode in this order on a first surface of a silicon substrate, and etching the opposite side surface of the first surface of the silicon substrate by deep reactive ion etching to form a diaphragm structure, in which the proportion R2 of the film thickness t2 of the second silicon oxide film with respect to the sum of the film thickness t1 of the first silicon oxide film and the film thickness t2 of the second silicon oxide film satisfies the following condition: 0.10 μm≦t1≦2.00 μm; and R2≧0.70.

Abstract translation: 一种膜片式谐振MEMS器件的制造方法，包括：形成第一氧化硅膜，形成第二氧化硅膜，形成下部电极，形成压电膜，形成上部电极，层叠第一氧化硅膜，第二氧化硅膜 氧化硅膜，下电极，压电膜和上电极，在硅衬底的第一表面上，并且通过深反应离子蚀刻蚀刻硅衬底的第一表面的相对侧表面，以形成 膜结构，其中第二氧化硅膜的膜厚度t2的比例R2相对于第一氧化硅膜的膜厚度t1与第二氧化硅膜的膜厚度t2之和的比例满足以下条件 ：0.10μm＆nlE; t1＆nlE;2.00μm; R2≥0.70。

公开(公告)号：US09174835B2

公开(公告)日：2015-11-03

申请号：US12979160

申请日：2010-12-27

Applicant: Ming Fang

Inventor： Ming Fang

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81C1/00666 ,  B81B7/0029 ,  B81B2203/0181 ,  B81C1/0019 ,  B81C2201/0169 ,  B81C2201/112

Abstract: A method of manufacturing microstructures, such as MEMS or NEMS devices, including forming a protective layer on a surface of a moveable component of the microstructure. For example, a silicide layer may be formed on one or more surfaces of a poly-silicon mass that is moveable with respect to a substrate of the microstructure. The process may be self-aligning.

Abstract translation: 一种制造微结构的方法，例如MEMS或NEMS器件，包括在微结构的可移动部件的表面上形成保护层。 例如，可以在可相对于微结构的基板移动的多晶硅块的一个或多个表面上形成硅化物层。 该过程可以是自对准的。

公开(公告)号：US08895339B2

公开(公告)日：2014-11-25

申请号：US13718598

申请日：2012-12-18

Applicant: Ruben B. Montez ,  Robert F. Steimle

Inventor： Ruben B. Montez ,  Robert F. Steimle

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0005 ,  B81B2201/0221 ,  B81B2201/0235 ,  B81B2203/0181 ,  B81B2203/06 ,  B81C1/0038 ,  B81C1/00952 ,  B81C2201/0169 ,  B81C2201/112 ,  G01P15/0802 ,  G01P2015/0871 ,  G01P2015/0874

Abstract: A mechanism for reducing stiction in a MEMS device by decreasing an amount of carbon from TEOS-based silicon oxide films that can accumulate on polysilicon surfaces during fabrication is provided. A carbon barrier material film is deposited between one or more polysilicon layer in a MEMS device and the TEOS-based silicon oxide layer. This barrier material blocks diffusion of carbon into the polysilicon, thereby reducing accumulation of carbon on the polysilicon surfaces. By reducing the accumulation of carbon, the opportunity for stiction due to the presence of the carbon is similarly reduced.

Abstract translation: 提供了一种用于通过减少在制造期间可能积聚在多晶硅表面上的基于TEOS的氧化硅膜的碳来减少MEMS器件中的静电的机制。 在MEMS器件中的一个或多个多晶硅层和基于TEOS的氧化硅层之间沉积碳阻挡材料膜。 该阻挡材料阻止碳扩散到多晶硅中，从而减少碳在多晶硅表面上的积累。 通过减少碳的积累，由于碳的存在而导致的静电机会同样地减少。