公开(公告)号：US20240250130A1

公开(公告)日：2024-07-25

申请号：US18593544

申请日：2024-03-01

Applicant: NXP B.V.

Inventor： Ibrahim Khalil ,  Bernhard Grote ,  Humayun Kabir ,  Bruce McRae Green

IPC: H01L29/40 ,  H01L29/06 ,  H01L29/20 ,  H01L29/205 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/402 ,  H01L29/0649 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/404 ,  H01L29/66462 ,  H01L29/78

Abstract: An embodiment of a semiconductor device includes a semiconductor substrate, a first dielectric layer disposed over the upper surface of the semiconductor substrate, and a first current-carrying electrode and a second current-carrying electrode formed over the semiconductor substrate within openings formed in the first dielectric layer. A control electrode is formed over the semiconductor substrate and disposed between the first current-carrying electrode and a second current-carrying electrode and over the first dielectric layer. A first conductive element is formed over the first dielectric layer, adjacent the control electrode and between the control electrode and the second current-carrying electrode. A second dielectric layer is disposed over the control electrode and over the first conductive element. A second conductive element is disposed over the second dielectric layer and over the first conductive element. An opening in the second dielectric layer couples the first conductive element to the second conductive element.

公开(公告)号：US20240055314A1

公开(公告)日：2024-02-15

申请号：US17818607

申请日：2022-08-09

Applicant: NXP B.V.

Inventor： Ljubo Radic ,  Richard Emil Sweeney ,  Vikas Shilimkar ,  Bernhard Grote ,  Darrell Glenn Hill ,  Ibrahim Khalil

IPC: H01L23/367 ,  H01L29/20 ,  H01L29/778

CPC classification number: H01L23/367 ,  H01L29/2003 ,  H01L29/7786

Abstract: A transistor formed in a semiconductor substrate is provided with a cooling trench. The cooling trench is elongated and extends laterally from a first end of an elongated gate electrode disposed above a channel region of the transistor to a second end of the gate electrode in a first direction that is parallel to a top surface of the semiconductor substrate. The cooling trench is coupled to the first current terminal and extends laterally from a first end to a second end of the first elongated cooling trench along the first direction and extends vertically from the first current terminal and through the top surface into the semiconductor substrate. The cooling trench is filled throughout with a thermally-conductive material configured to dissipate heat from the channel region into the semiconductor substrate.

公开(公告)号：US11923424B2

公开(公告)日：2024-03-05

申请号：US17139636

申请日：2020-12-31

Applicant: NXP B.V.

Inventor： Ibrahim Khalil ,  Bernhard Grote ,  Humayun Kabir ,  Bruce McRae Green

IPC: H01L29/40 ,  H01L29/06 ,  H01L29/20 ,  H01L29/205 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/402 ,  H01L29/0649 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/404 ,  H01L29/66462 ,  H01L29/78

Abstract: An embodiment of a semiconductor device includes a semiconductor substrate, a first dielectric layer disposed over the upper surface of the semiconductor substrate, and a first current-carrying electrode and a second current-carrying electrode formed over the semiconductor substrate within openings formed in the first dielectric layer. A control electrode is formed over the semiconductor substrate and disposed between the first current-carrying electrode and a second current-carrying electrode and over the first dielectric layer. A first conductive element is formed over the first dielectric layer, adjacent the control electrode and between the control electrode and the second current-carrying electrode. A second dielectric layer is disposed over the control electrode and over the first conductive element. A second conductive element is disposed over the second dielectric layer and over the first conductive element.

公开(公告)号：US20220208975A1

公开(公告)日：2022-06-30

申请号：US17139636

申请日：2020-12-31

Applicant: NXP B.V.

Inventor： Ibrahim Khalil ,  Bernhard Grote ,  Humayun Kabir ,  Bruce McRae Green

IPC: H01L29/40 ,  H01L29/20 ,  H01L29/205 ,  H01L29/06 ,  H01L29/66 ,  H01L29/78

Abstract: An embodiment of a semiconductor device includes a semiconductor substrate, a first dielectric layer disposed over the upper surface of the semiconductor substrate, and a first current-carrying electrode and a second current-carrying electrode formed over the semiconductor substrate within openings formed in the first dielectric layer. A control electrode is formed over the semiconductor substrate and disposed between the first current-carrying electrode and a second current-carrying electrode and over the first dielectric layer. A first conductive element is formed over the first dielectric layer, adjacent the control electrode and between the control electrode and the second current-carrying electrode. A second dielectric layer is disposed over the control electrode and over the first conductive element. A second conductive element is disposed over the second dielectric layer and over the first conductive element.