公开(公告)号：US10217671B2

公开(公告)日：2019-02-26

申请号：US15865867

申请日：2018-01-09

Applicant: NXP B.V.

Inventor： Olivier Tesson ,  Thomas Francois

IPC: H01L29/06 ,  H01L29/66 ,  H01L29/78 ,  H01L21/762 ,  H01L23/482 ,  H01L29/417 ,  H01L29/423 ,  H01L21/8234

Abstract: A semiconductor device comprising a switch and a method of making the same. The device, has a layout having one or more rectangular unit cells. Each unit cell includes a gate having a substantially cross-shaped part comprising four arms that divide the unit cell into quadrants; and a substantially loop-shaped part, wherein a center of the cross-shaped part is located inside the loop-shaped part, and wherein the loop-shaped part intersects each arm of the cross-shaped part to divide each quadrant into an inner region located inside the loop-shaped part; and an outer region located outside the loop-shaped part. Each unit cell also includes a substantially loop-shaped active region forming a source and drain of the switch. Each unit cell further includes a plurality of connection members extending over the gate, source and drain for providing electrical connections to the source and drain.

公开(公告)号：US20170373054A1

公开(公告)日：2017-12-28

申请号：US15596188

申请日：2017-05-16

Applicant: NXP B.V.

Inventor： Olivier Tesson ,  Thomas Francois

IPC: H01L27/02 ,  H01L29/06 ,  H01L23/528 ,  H01L29/417 ,  H01L23/522

CPC classification number: H01L27/0292 ,  H01L23/5226 ,  H01L23/5283 ,  H01L27/0207 ,  H01L27/0266 ,  H01L29/0649 ,  H01L29/0692 ,  H01L29/41725 ,  H01L29/41758

Abstract: A semiconductor switch device and a method of making the same. The semiconductor switch device includes a field effect transistor located on a semiconductor substrate. The field effect transistor includes a plurality of gates. Each gate includes a gate electrode and gate dielectric arranged in a loop on a major surface of the substrate. The loops formed by the gates are arranged concentrically. Each gate has a source region located adjacent an inner edge or outer edge of the loop formed by that gate and a drain region located adjacent the other edge of said inner edge and said outer edge of the loop formed by that gate.

公开(公告)号：US10217735B2

公开(公告)日：2019-02-26

申请号：US15596188

申请日：2017-05-16

Applicant: NXP B.V.

Inventor： Olivier Tesson ,  Thomas Francois

IPC: H01L23/62 ,  H01L27/02 ,  H01L29/06 ,  H01L23/522 ,  H01L23/528 ,  H01L29/417

Abstract: A semiconductor switch device and a method of making the same. The semiconductor switch device includes a field effect transistor located on a semiconductor substrate. The field effect transistor includes a plurality of gates. Each gate includes a gate electrode and gate dielectric arranged in a loop on a major surface of the substrate. The loops formed by the gates are arranged concentrically. Each gate has a source region located adjacent an inner edge or outer edge of the loop formed by that gate and a drain region located adjacent the other edge of said inner edge and said outer edge of the loop formed by that gate.

公开(公告)号：US20180211882A1

公开(公告)日：2018-07-26

申请号：US15865867

申请日：2018-01-09

Applicant: NXP B.V.

Inventor： Olivier Tesson ,  Thomas Francois

IPC: H01L21/8234 ,  H01L29/78 ,  H01L29/66 ,  H01L21/762 ,  H01L29/417 ,  H01L23/482 ,  H01L29/423

CPC classification number: H01L21/823475 ,  H01L21/76224 ,  H01L23/4824 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/41758 ,  H01L29/4238 ,  H01L29/66477 ,  H01L29/78

Abstract: A semiconductor device comprising a switch and a method of making the same. The device, has a layout having one or more rectangular unit cells. Each unit cell includes a gate having a substantially cross-shaped part comprising four arms that divide the unit cell into quadrants; and a substantially loop-shaped part, wherein a center of the cross-shaped part is located inside the loop-shaped part, and wherein the loop-shaped part intersects each arm of the cross-shaped part to divide each quadrant into an inner region located inside the loop-shaped part; and an outer region located outside the loop-shaped part. Each unit cell also includes a substantially loop-shaped active region forming a source and drain of the switch. Each unit cell further includes a plurality of connection members extending over the gate, source and drain for providing electrical connections to the source and drain.