公开(公告)号：US11072871B2

公开(公告)日：2021-07-27

申请号：US16721935

申请日：2019-12-20

Applicant: National Chung-Shan Institute of Science and Technology

Inventor： Chih-Wei Kuo ,  Dai-Liang Ma ,  Chia-Hung Tai ,  Bang-Ying Yu ,  Cheng-Jung Ko ,  Bo-Cheng Lin ,  Hsueh-I Chen

IPC: C30B35/00 ,  C30B23/00 ,  C30B23/02 ,  C23C14/24 ,  C23C14/06 ,  C30B29/36

Abstract: A preparation apparatus for uniform silicon carbide crystals comprises a circular cylinder, a doping tablet, and a plate to stabilize and control the supply of dopants. The accessory does not participate in the reaction in the growth chamber but maintains its efficacy during growth. Finally, a single semi-insulating silicon carbide crystal with uniform electrical characteristics can be obtained.

公开(公告)号：US11049717B2

公开(公告)日：2021-06-29

申请号：US16231262

申请日：2018-12-21

Applicant: National Chung-Shan Institute of Science and Technology

Inventor： Dai-Liang Ma ,  Cheng-Jung Ko ,  Chia-Hung Tai ,  Jun-Bin Huang ,  Bang-Ying Yu

IPC: C30B1/02 ,  H01L21/02 ,  C30B29/36 ,  C30B33/02

Abstract: A method for fabricating an ultra-thin graphite film on a silicon carbide substrate includes the steps of: (A) providing a polyamic acid solution and a siloxane-containing coupling agent for polymerizing under an inert gas atmosphere to form a siloxane-coupling-group-containing polyamic acid solution; (B) performing a curing process after applying the siloxane-coupling-group-containing polyamic acid solution to a silicon carbide substrate; (C) placing the silicon carbide substrate in a graphite crucible before placing the graphite crucible in a reaction furnace to perform a carbonization process under an inert gas atmosphere; (D) subjecting the silicon carbide substrate to a graphitization process to obtain a graphite film, thereby make it possible to fabricate an ultra-thin graphite film of high-quality on the surface of silicon carbide in a lower graphitization temperature range.

公开(公告)号：US20210189590A1

公开(公告)日：2021-06-24

申请号：US16721935

申请日：2019-12-20

Applicant: National Chung-Shan Institute of Science and Technology

Inventor： Chih-Wei Kuo ,  Dai-Liang Ma ,  Chia-Hung Tai ,  Bang-Ying Yu ,  Cheng-Jung Ko ,  Bo-Cheng Lin ,  Hsueh-I Chen

IPC: C30B23/00 ,  C30B23/02 ,  C30B29/36 ,  C23C14/06 ,  C23C14/24

Abstract: A preparation apparatus for uniform silicon carbide crystals comprises a circular cylinder, a doping tablet, and a plate to stabilize and control the supply of dopants. The accessory does not participate in the reaction in the growth chamber but maintains its efficacy during growth. Finally, a single semi-insulating silicon carbide crystal with uniform electrical characteristics can be obtained.