公开(公告)号：US10385443B2

公开(公告)日：2019-08-20

申请号：US15353000

申请日：2016-11-16

Applicant: NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Dai-Liang Ma ,  Hsueh-I Chen ,  Bo-Cheng Lin ,  Cheng-Jung Ko ,  Ying-Cong Zhao ,  Chih-Wei Kuo ,  Shu-Yu Yeh

IPC: C30B29/36 ,  C23C14/24 ,  C30B23/00 ,  C23C14/06 ,  C23C14/26 ,  C30B23/02 ,  C30B23/06 ,  C30B29/40

Abstract: A device for growing large-sized monocrystalline crystals, including a crucible adapted to grow crystals from a material source and with a seed crystal and including therein a seed crystal region, a growth chamber, and a material source region; a thermally insulating material disposed outside the crucible and below a heat dissipation component; and a plurality of heating components disposed outside the thermally insulating material to provide heat sources, wherein the heat dissipation component is of a heat dissipation inner diameter and a heat dissipation height which exceeds a thickness of the thermally insulating material.

公开(公告)号：US11072871B2

公开(公告)日：2021-07-27

申请号：US16721935

申请日：2019-12-20

Applicant: National Chung-Shan Institute of Science and Technology

Inventor： Chih-Wei Kuo ,  Dai-Liang Ma ,  Chia-Hung Tai ,  Bang-Ying Yu ,  Cheng-Jung Ko ,  Bo-Cheng Lin ,  Hsueh-I Chen

IPC: C30B35/00 ,  C30B23/00 ,  C30B23/02 ,  C23C14/24 ,  C23C14/06 ,  C30B29/36

Abstract: A preparation apparatus for uniform silicon carbide crystals comprises a circular cylinder, a doping tablet, and a plate to stabilize and control the supply of dopants. The accessory does not participate in the reaction in the growth chamber but maintains its efficacy during growth. Finally, a single semi-insulating silicon carbide crystal with uniform electrical characteristics can be obtained.

公开(公告)号：US09689087B1

公开(公告)日：2017-06-27

申请号：US14961963

申请日：2015-12-08

Applicant: NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Ta-Ching Li ,  Dai-Liang Ma ,  Bang-Ying Yu ,  Bo-Cheng Lin

IPC: C30B23/04 ,  C30B23/02 ,  C30B23/00 ,  C30B29/36

CPC classification number: C30B23/025 ,  C30B29/36

Abstract: A method of making a photonic crystal includes step 1 providing a seed, followed by etching a surface of the seed to form thereon submicron voids; step 2 providing a graphite disk, followed by coating a side of the graphite disk with a graphite adhesive whereby the void-formed surface of the seed is attached to the graphite disk to form a seed holder; step 3 placing the seed holder above a growth chamber, followed by placing a raw material below the growth chamber; step 4 forming a thermal field in the growth chamber with a heating device to sublime the raw material; and step 5 controlling temperature, thermal field, atmosphere and pressure in the growth chamber to allow the gaseous raw material to be conveyed and deposited on the seed, thereby forming a photonic crystal.

公开(公告)号：US20210189590A1

公开(公告)日：2021-06-24

申请号：US16721935

申请日：2019-12-20

Applicant: National Chung-Shan Institute of Science and Technology

Inventor： Chih-Wei Kuo ,  Dai-Liang Ma ,  Chia-Hung Tai ,  Bang-Ying Yu ,  Cheng-Jung Ko ,  Bo-Cheng Lin ,  Hsueh-I Chen

IPC: C30B23/00 ,  C30B23/02 ,  C30B29/36 ,  C23C14/06 ,  C23C14/24

Abstract: A preparation apparatus for uniform silicon carbide crystals comprises a circular cylinder, a doping tablet, and a plate to stabilize and control the supply of dopants. The accessory does not participate in the reaction in the growth chamber but maintains its efficacy during growth. Finally, a single semi-insulating silicon carbide crystal with uniform electrical characteristics can be obtained.