公开(公告)号：US12084388B2

公开(公告)日：2024-09-10

申请号：US18096568

申请日：2023-01-13

Applicant: NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Chih-Hsing Wang ,  Cheng-Jung Ko ,  Chuen-Ming Gee ,  Chih-Wei Kuo ,  Hsueh-I Chen ,  Jun-Bin Huang ,  Ying-Tsung Chao

IPC: C04B35/56 ,  C01B32/21 ,  C04B35/626 ,  C04B35/634 ,  C04B35/64 ,  C04B35/645 ,  C30B23/00 ,  C30B35/00

CPC classification number: C04B35/5607 ,  C01B32/21 ,  C04B35/6264 ,  C04B35/63416 ,  C04B35/6342 ,  C04B35/63424 ,  C04B35/63444 ,  C04B35/645 ,  C04B2235/3839 ,  C04B2235/6562 ,  C04B2235/6567 ,  C04B2235/661 ,  C30B23/00 ,  C30B35/002

Abstract: A method for preparing a carbide protective layer comprises: (A) mixing a carbide powder, an organic binder, an organic solvent and a sintering aid to form a slurry; (B) spraying the slurry on a surface of a graphite component to form a composite component; (C) subjecting the composite component to a cold isostatic pressing densification process; (D) subjecting the composite component to a constant temperature heat treatment; (E) repeating steps (B)-(D) until a coating is formed on a surface of the composite component; (F) subjecting the coating to a segmented sintering process; (G) obtaining a carbide protective layer used for the surface of the composite component. Accordingly, while the carbide protective layer can be completed by using the wet cold isostatic pressing densification process and the cyclic multiple superimposition method, so that it can improve the corrosion resistance in the silicon carbide crystal growth process environment.

公开(公告)号：US11130152B2

公开(公告)日：2021-09-28

申请号：US16699093

申请日：2019-11-28

Applicant: National Chung-Shan Institute of Science and Technology

Inventor： Cheng-Jung Ko ,  Jun-Bin Huang ,  Chih-Wei Kuo ,  Dai-Liang Ma ,  Bang-Ying Yu

IPC: B05D1/18 ,  B05D1/02 ,  B05D3/02 ,  C01G35/00 ,  C23C18/02 ,  C23C18/12 ,  B05D3/04

Abstract: A method for the formation of tantalum carbides on a graphite substrate includes the steps of: (a) adding an organic tantalum compound, a chelating agent, a pre-polymer to an organic solvent to form a tantalum polymeric solution; (b) subjecting a graphite substrate with the tantalum polymeric solution to a curing process to form a polymeric tantalum film on the graphite substrate; and (c) subjecting the polymeric tantalum film on the graphite substrate in an oven to a pyrolytic reaction in the presence of a protective gas to obtain a protective tantalum carbide on the graphite substrate.

公开(公告)号：US10385443B2

公开(公告)日：2019-08-20

申请号：US15353000

申请日：2016-11-16

Applicant: NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Dai-Liang Ma ,  Hsueh-I Chen ,  Bo-Cheng Lin ,  Cheng-Jung Ko ,  Ying-Cong Zhao ,  Chih-Wei Kuo ,  Shu-Yu Yeh

IPC: C30B29/36 ,  C23C14/24 ,  C30B23/00 ,  C23C14/06 ,  C23C14/26 ,  C30B23/02 ,  C30B23/06 ,  C30B29/40

Abstract: A device for growing large-sized monocrystalline crystals, including a crucible adapted to grow crystals from a material source and with a seed crystal and including therein a seed crystal region, a growth chamber, and a material source region; a thermally insulating material disposed outside the crucible and below a heat dissipation component; and a plurality of heating components disposed outside the thermally insulating material to provide heat sources, wherein the heat dissipation component is of a heat dissipation inner diameter and a heat dissipation height which exceeds a thickness of the thermally insulating material.

公开(公告)号：US11049717B2

公开(公告)日：2021-06-29

申请号：US16231262

申请日：2018-12-21

Applicant: National Chung-Shan Institute of Science and Technology

Inventor： Dai-Liang Ma ,  Cheng-Jung Ko ,  Chia-Hung Tai ,  Jun-Bin Huang ,  Bang-Ying Yu

IPC: C30B1/02 ,  H01L21/02 ,  C30B29/36 ,  C30B33/02

Abstract: A method for fabricating an ultra-thin graphite film on a silicon carbide substrate includes the steps of: (A) providing a polyamic acid solution and a siloxane-containing coupling agent for polymerizing under an inert gas atmosphere to form a siloxane-coupling-group-containing polyamic acid solution; (B) performing a curing process after applying the siloxane-coupling-group-containing polyamic acid solution to a silicon carbide substrate; (C) placing the silicon carbide substrate in a graphite crucible before placing the graphite crucible in a reaction furnace to perform a carbonization process under an inert gas atmosphere; (D) subjecting the silicon carbide substrate to a graphitization process to obtain a graphite film, thereby make it possible to fabricate an ultra-thin graphite film of high-quality on the surface of silicon carbide in a lower graphitization temperature range.

公开(公告)号：US20210189590A1

公开(公告)日：2021-06-24

申请号：US16721935

申请日：2019-12-20

Applicant: National Chung-Shan Institute of Science and Technology

Inventor： Chih-Wei Kuo ,  Dai-Liang Ma ,  Chia-Hung Tai ,  Bang-Ying Yu ,  Cheng-Jung Ko ,  Bo-Cheng Lin ,  Hsueh-I Chen

IPC: C30B23/00 ,  C30B23/02 ,  C30B29/36 ,  C23C14/06 ,  C23C14/24

Abstract: A preparation apparatus for uniform silicon carbide crystals comprises a circular cylinder, a doping tablet, and a plate to stabilize and control the supply of dopants. The accessory does not participate in the reaction in the growth chamber but maintains its efficacy during growth. Finally, a single semi-insulating silicon carbide crystal with uniform electrical characteristics can be obtained.

公开(公告)号：US11072871B2

公开(公告)日：2021-07-27

申请号：US16721935

申请日：2019-12-20

Applicant: National Chung-Shan Institute of Science and Technology

Inventor： Chih-Wei Kuo ,  Dai-Liang Ma ,  Chia-Hung Tai ,  Bang-Ying Yu ,  Cheng-Jung Ko ,  Bo-Cheng Lin ,  Hsueh-I Chen

IPC: C30B35/00 ,  C30B23/00 ,  C30B23/02 ,  C23C14/24 ,  C23C14/06 ,  C30B29/36

Abstract: A preparation apparatus for uniform silicon carbide crystals comprises a circular cylinder, a doping tablet, and a plate to stabilize and control the supply of dopants. The accessory does not participate in the reaction in the growth chamber but maintains its efficacy during growth. Finally, a single semi-insulating silicon carbide crystal with uniform electrical characteristics can be obtained.

公开(公告)号：US20210162453A1

公开(公告)日：2021-06-03

申请号：US16699093

申请日：2019-11-28

Applicant: National Chung-Shan Institute of Science and Technology

Inventor： Cheng-Jung Ko ,  Jun-Bin Huang ,  Chih-Wei Kuo ,  Dai-Liang Ma ,  Bang-Ying Yu

IPC: B05D1/18 ,  B05D1/02 ,  B05D3/02 ,  B05D3/04 ,  C01G35/00

Abstract: A method for the formation of tantalum carbides on a graphite substrate includes the steps of: (a) adding an organic tantalum compound, a chelating agent, a pre-polymer to an organic solvent to form a tantalum polymeric solution; (b) subjecting a graphite substrate with the tantalum polymeric solution to a curing process to form a polymeric tantalum film on the graphite substrate; and (c) subjecting the polymeric tantalum film on the graphite substrate in an oven to a pyrolytic reaction in the presence of a protective gas to obtain a protective tantalum carbide on the graphite substrate.

公开(公告)号：US10246334B2

公开(公告)日：2019-04-02

申请号：US15434088

申请日：2017-02-16

Applicant: NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Dai-Liang Ma ,  Cheng-Jung Ko ,  Bang-Ying Yu ,  Tsao-Chun Peng

IPC: C01B32/21 ,  C01B32/205

Abstract: A method of producing a heterophase graphite, including the steps of (A) providing a silicon carbide single-crystal substrate; (B) placing the silicon carbide single-crystal substrate in a graphite crucible and then in a reactor to undergo an air extraction process; and (C) performing a desilicification reaction on the silicon carbide single-crystal substrate in an inert gas atmosphere to obtain 2H graphite and 3R graphite, so as to directly produce lumpy (sheetlike, crushed, particulate, and powderlike) 2H graphite and 3R graphite, and preclude secondary contamination of raw materials which might otherwise occur because of a crushing step, an oxidation step, and an acid rinsing step.