公开(公告)号：US09278864B2

公开(公告)日：2016-03-08

申请号：US14432900

申请日：2013-10-02

Applicant: OCI COMPANY LTD. ,  INSTITUTE OF ION-PLASMA AND LASER TECHNOLOGIES

Inventor： Taek Joong Kim ,  Yong Il Kim ,  Kyung Yeol Kim ,  Deok Yun Kim ,  Ashurov Khatam ,  Salikhov Shavkat ,  Rotshteyn Vladimir ,  Ashurova Khekayat ,  Kurbanov Aziz ,  Abdisaidov Ilyos ,  Azizov Sultan ,  Ashurov Rustam

IPC: C01B33/04 ,  B01J23/72

CPC classification number: C01B33/043 ,  B01J23/72

Abstract: Provided is a method for preparing monosilane, more particularly a method for economically preparing monosilane, which is useful for the composition of a thin semiconductor structure and multipurpose high-purity polycrystalline silicon, by preparing monosilane with high purity and high yield using trialkoxysilane.

Abstract translation: 本发明提供一种制备单硅烷的方法，特别是一种经济地制备单硅烷的方法，其可用于薄半导体结构和多用途高纯度多晶硅的组成，通过使用三烷氧基硅烷制备高纯度和高产率的甲硅烷。

公开(公告)号：US20150251916A1

公开(公告)日：2015-09-10

申请号：US14432900

申请日：2013-10-02

Applicant: OCI COMPANY LTD. ,  INSTITUTE OF ION-PLASMA AND LASER TECHNOLOGIES

Inventor： Taek Joong Kim ,  Yong Il Kim ,  Kyung Yeol Kim ,  Deok Yun Kim ,  Ashurov Khatam ,  Salikhov Shavkat ,  Rotshteyn Vladimir ,  Ashurova Khekayat ,  Kurbanov Aziz ,  Abdisaidov Ilyos ,  Azizov Sultan ,  Ashurov Rustam

IPC: C01B33/04

CPC classification number: C01B33/043 ,  B01J23/72

Abstract: Provided is a method for preparing monosilane, more particularly a method for economically preparing monosilane, which is useful for the composition of a thin semiconductor structure and multipurpose high-purity polycrystalline silicon, by preparing monosilane with high purity and high yield using trialkoxysilane.

Abstract translation: 本发明提供一种制备单硅烷的方法，特别是一种经济地制备单硅烷的方法，其可用于薄半导体结构和多用途高纯度多晶硅的组成，通过使用三烷氧基硅烷制备高纯度和高产率的甲硅烷。