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公开(公告)号:US20250097607A1
公开(公告)日:2025-03-20
申请号:US18970894
申请日:2024-12-05
Applicant: OMNIVISION TECHNOLOGIES, INC.
Inventor: Tomas Geurts , Amit Mittra , Kevin Johnson
IPC: H04N25/78
Abstract: Multiple read image sensors, and associated methods for the same, are disclosed herein. In one embodiment, a method comprises reading out a reset level from a pixel to a corresponding sample and hold circuit; storing the reset level to a first storage device and to a second storage device of the sample and hold circuit; reading out a signal level from the pixel to the sample and hold circuit; and storing the signal level to a third storage device and to a fourth storage device of the sample and hold circuit. The reset level and the signal level can correspond to a same correlated double sampling of an image data signal captured by the pixel. The method can further include reading out the reset level from the first storage device; reading out the signal level from the third storage device; and recovering a first copy of the image data signal.
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公开(公告)号:US12200390B2
公开(公告)日:2025-01-14
申请号:US18364416
申请日:2023-08-02
Applicant: OMNIVISION TECHNOLOGIES, INC.
Inventor: Tomas Geurts , Amit Mittra , Kevin Johnson
IPC: H04N25/78 , H04N25/59 , H04N25/616 , H04N25/771 , H04N25/79
Abstract: Multiple read image sensors, and associated methods for the same, are disclosed herein. In one embodiment, a method comprises reading out a reset level from a pixel to a corresponding sample and hold circuit; storing the reset level to a first storage device and to a second storage device of the sample and hold circuit; reading out a signal level from the pixel to the sample and hold circuit; and storing the signal level to a third storage device and to a fourth storage device of the sample and hold circuit. The reset level and the signal level can correspond to a same correlated double sampling of an image data signal captured by the pixel. The method can further include reading out the reset level from the first storage device; reading out the signal level from the third storage device; and recovering a first copy of the image data signal.
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公开(公告)号:US20240292131A1
公开(公告)日:2024-08-29
申请号:US18364416
申请日:2023-08-02
Applicant: OMNIVISION TECHNOLOGIES, INC.
Inventor: Tomas Geurts , Amit Mittra , Kevin Johnson
IPC: H04N25/78
CPC classification number: H04N25/78
Abstract: Multiple read image sensors, and associated methods for the same, are disclosed herein. In one embodiment, a method comprises reading out a reset level from a pixel to a corresponding sample and hold circuit; storing the reset level to a first storage device and to a second storage device of the sample and hold circuit; reading out a signal level from the pixel to the sample and hold circuit; and storing the signal level to a third storage device and to a fourth storage device of the sample and hold circuit. The reset level and the signal level can correspond to a same correlated double sampling of an image data signal captured by the pixel. The method can further include reading out the reset level from the first storage device; reading out the signal level from the third storage device; and recovering a first copy of the image data signal.
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4.
公开(公告)号:US20240314460A1
公开(公告)日:2024-09-19
申请号:US18393135
申请日:2023-12-21
Applicant: OMNIVISION TECHNOLOGIES, INC.
Inventor: Amit Mittra , Kevin Johnson , Hiroaki Ebihara , Kenny Geng
Abstract: A pixel includes a photosensor configured to photogenerate charge in response to incident light. A floating diffusion is configured to receive the charge photogenerated by the photosensor. A transfer transistor is coupled between the floating diffusion and the photosensor. A dual floating diffusion (DFD) transistor is coupled to the floating diffusion. A binning node is coupled to the DFD transistor. A floating diffusion interconnect grid is coupled to the binning node of the pixel and a binning node of a second pixel. The pixel and the second pixel are included in a pixel array. The DFD transistor is configured to couple the binning node to the floating diffusion when activated during a readout operation of the pixel array to provide a binned readout, and the DFD transistor is configured not to couple the binning node to the floating diffusion when deactivated to provide a full resolution readout.
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