公开(公告)号：US09819883B2

公开(公告)日：2017-11-14

申请号：US14958080

申请日：2015-12-03

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Zhiyong Zhan ,  Qingfei Chen ,  Chin-Chang Pai

IPC: H04N5/357 ,  H04N5/3745

CPC classification number: H04N5/357 ,  H04N5/3745

Abstract: A pixel circuit includes a photodiode disposed in a semiconductor material to accumulate image charge in response to incident light directed into the photodiode, and a transfer transistor coupled to the photodiode. The circuit also includes a noise correction circuit coupled to receive a transfer control signal and the noise correction circuit is coupled to selectively enable or disable the transfer transistor from receiving the transfer control signal. A storage transistor is coupled to the transfer transistor, and the transfer transistor is coupled to selectively transfer the image charge accumulated in the photodiode to the storage transistor for storage in response to the transfer control signal if the transfer transistor is enabled to receive the transfer control signal.

公开(公告)号：US20170163912A1

公开(公告)日：2017-06-08

申请号：US14958080

申请日：2015-12-03

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Zhiyong Zhan ,  Qingfei Chen ,  Chin-Chang Pai

IPC: H04N5/357 ,  H04N5/369

CPC classification number: H04N5/357 ,  H04N5/3745

Abstract: A pixel circuit includes a photodiode disposed in a semiconductor material to accumulate image charge in response to incident light directed into the photodiode, and a transfer transistor coupled to the photodiode. The circuit also includes a noise correction circuit coupled to receive a transfer control signal and the noise correction circuit is coupled to selectively enable or disable the transfer transistor from receiving the transfer control signal. A storage transistor is coupled to the transfer transistor, and the transfer transistor is coupled to selectively transfer the image charge accumulated in the photodiode to the storage transistor for storage in response to the transfer control signal if the transfer transistor is enabled to receive the transfer control signal.

公开(公告)号：US10103187B2

公开(公告)日：2018-10-16

申请号：US14973017

申请日：2015-12-17

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Qingfei Chen ,  Qingwei Shan ,  Chin-Chang Pai

IPC: H04N5/369 ,  H04N5/363 ,  H04N5/3745 ,  H01L27/146

Abstract: An image sensor includes a plurality of photodiodes disposed in a semiconductor material and a plurality of transfer transistors. Individual transfer transistors in the plurality of transfer transistors are coupled to individual photodiodes in the plurality of photodiodes. A floating diffusion is also coupled to the plurality of transfer transistors to receive image charge from the plurality of photodiodes. The floating diffusion is coupled to receive a preset voltage, and the preset voltage is substantially equal a dark condition steady-state read voltage.

公开(公告)号：US20170180662A1

公开(公告)日：2017-06-22

申请号：US14973017

申请日：2015-12-17

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Qingfei Chen ,  Qingwei Shan ,  Chin-Chang Pai

IPC: H04N5/378 ,  H04N5/374 ,  H01L27/146 ,  H04N5/369

CPC classification number: H01L27/14616 ,  H01L27/14645 ,  H04N5/363 ,  H04N5/3698 ,  H04N5/37457

Abstract: An image sensor includes a plurality of photodiodes disposed in a semiconductor material and a plurality of transfer transistors. Individual transfer transistors in the plurality of transfer transistors are coupled to individual photodiodes in the plurality of photodiodes. A floating diffusion is also coupled to the plurality of transfer transistors to receive image charge from the plurality of photodiodes. The floating diffusion is coupled to receive a preset voltage, and the preset voltage is substantially equal a dark condition steady-state read voltage.