公开(公告)号：US20210337169A1

公开(公告)日：2021-10-28

申请号：US16855857

申请日：2020-04-22

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Qingfei Chen ,  Rui Wang ,  Wei Wei Wang ,  Zhiyong Zhan ,  Xin Wang ,  Qingwei Shan ,  Kenny Geng

IPC: H04N9/04 ,  H04N5/369 ,  H04N5/3745 ,  H04N5/378

Abstract: An imaging device includes groupings of photodiodes having four photodiodes. A transfer transistor is between each photodiode and a floating diffusion. Each floating diffusion is coupled to up to two photodiodes per grouping at a time through transfer transistors. A buffer transistor is coupled to each floating diffusion. The buffer transistors may be in a first or second grouping of buffer transistors. A first bit line is coupled to up to two buffer transistors of the first grouping and a second bit line is coupled to up to two buffer transistors of the second grouping of buffer transistors at a time. A color filter array including a plurality of groupings of color filters is disposed over respective photodiodes of the photodiode array, wherein each grouping of color filters includes four color filters having a same color, wherein each grouping of color filters overlaps two groupings of photodiodes.

公开(公告)号：US11284045B2

公开(公告)日：2022-03-22

申请号：US16855857

申请日：2020-04-22

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Qingfei Chen ,  Rui Wang ,  Wei Wei Wang ,  Zhiyong Zhan ,  Xin Wang ,  Qingwei Shan ,  Kenny Geng

IPC: H04N5/374 ,  H04N9/04 ,  H04N5/369 ,  H04N5/378 ,  H04N5/3745 ,  H01L27/146

Abstract: An imaging device includes groupings of photodiodes having four photodiodes. A transfer transistor is between each photodiode and a floating diffusion. Each floating diffusion is coupled to up to two photodiodes per grouping at a time through transfer transistors. A buffer transistor is coupled to each floating diffusion. The buffer transistors may be in a first or second grouping of buffer transistors. A first bit line is coupled to up to two buffer transistors of the first grouping and a second bit line is coupled to up to two buffer transistors of the second grouping of buffer transistors at a time. A color filter array including a plurality of groupings of color filters is disposed over respective photodiodes of the photodiode array, wherein each grouping of color filters includes four color filters having a same color, wherein each grouping of color filters overlaps two groupings of photodiodes.

公开(公告)号：US20210337147A1

公开(公告)日：2021-10-28

申请号：US16855854

申请日：2020-04-22

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Qingfei Chen ,  Chin Poh Pang ,  Qingwei Shan

IPC: H04N5/378 ,  H04N5/3745 ,  H01L27/146

Abstract: An imaging device includes a first pixel circuit having a first plurality of photodiodes that includes a phase detection autofocus photodiode with image sensing photodiodes. A first buffer transistor having a first threshold voltage is coupled to the first plurality of photodiodes to generate a first output signal. A second pixel circuit is included having a second plurality of photodiodes that are all image sensing photodiodes. A second buffer transistor having a second threshold voltage is coupled to the second plurality of photodiodes to generate a second output signal. The first threshold voltage is less than the second threshold voltage. A driver is coupled to receive a combination of the first and second output signals to generate a total output signal. An influence of the first output signal dominates the second output signal in the total output signal because the first threshold voltage is less than the second threshold voltage.

公开(公告)号：US20160165165A1

公开(公告)日：2016-06-09

申请号：US14559733

申请日：2014-12-03

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Qingfei Chen ,  Duli Mao ,  Han Lei Lock ,  Qingwei Shan

IPC: H04N5/374 ,  H04N5/63 ,  H04N5/378

CPC classification number: H04N5/3741 ,  H04N5/335 ,  H04N5/378 ,  H04N5/63

Abstract: A reset level in a pixel cell is boosted by switching ON a reset transistor of the pixel cell to charge the floating diffusion to a first reset level during a reset operation. A select transistor is switched from OFF to ON during the floating diffusion reset operation to discharge an output terminal of an amplifier transistor. The reset transistor is switched OFF after the output terminal of the amplifier transistor has been discharged in response to the switching ON of the select transistor. The output terminal of the amplifier transistor charges to a static level after being discharged. The floating diffusion coupled to the input terminal of the amplifier transistor follows the output terminal of the amplifier transistor across an amplifier capacitance coupled between the input terminal and the output terminal of the amplifier transistor to boost the reset level of the floating diffusion.

Abstract translation: 通过在复位操作期间接通像素单元的复位晶体管以将浮动扩散充电到第一复位电平来提高像素单元中的复位电平。 在浮动扩散复位操作期间，选择晶体管从OFF切换到ON，以放大放大器晶体管的输出端。 在放大晶体管的输出端已响应于选择晶体管的导通而放电之后，复位晶体管截止。 放大器晶体管的输出端子在放电后充电到静态电平。 耦合到放大器晶体管的输入端的浮动扩散器沿着放大器晶体管的输出端连接放大器电容，该放大器电容耦合在放大器晶体管的输入端和输出端之间，以提高浮置扩散的复位电平。

公开(公告)号：US11716546B2

公开(公告)日：2023-08-01

申请号：US17649890

申请日：2022-02-03

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Qingfei Chen ,  Rui Wang ,  Wei Wei Wang ,  Zhiyong Zhan ,  Xin Wang ,  Qingwei Shan ,  Kenny Geng

IPC: H04N5/374 ,  H04N25/11 ,  H04N25/75 ,  H04N25/77 ,  H04N25/704 ,  H01L27/146

CPC classification number: H04N25/11 ,  H04N25/704 ,  H04N25/75 ,  H04N25/77 ,  H01L27/14621 ,  H01L27/14645

Abstract: An imaging device includes groupings of photodiodes having four photodiodes. A transfer transistor is between each photodiode and a floating diffusion. Each floating diffusion is coupled to up to two photodiodes per grouping at a time through transfer transistors. A buffer transistor is coupled to each floating diffusion. The buffer transistors may be in a first or second grouping of buffer transistors. A first bit line is coupled to up to two buffer transistors of the first grouping and a second bit line is coupled to up to two buffer transistors of the second grouping of buffer transistors at a time. A color filter array including a plurality of groupings of color filters is disposed over respective photodiodes of the photodiode array, wherein each grouping of color filters includes four color filters having a same color, wherein each grouping of color filters overlaps two groupings of photodiodes.

公开(公告)号：US20220159222A1

公开(公告)日：2022-05-19

申请号：US17649890

申请日：2022-02-03

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Qingfei Chen ,  Rui Wang ,  Wei Wei Wang ,  Zhiyong Zhan ,  Xin Wang ,  Qingwei Shan ,  Kenny Geng

IPC: H04N9/04 ,  H04N5/369 ,  H04N5/378 ,  H04N5/3745

Abstract: An imaging device includes groupings of photodiodes having four photodiodes. A transfer transistor is between each photodiode and a floating diffusion. Each floating diffusion is coupled to up to two photodiodes per grouping at a time through transfer transistors. A buffer transistor is coupled to each floating diffusion. The buffer transistors may be in a first or second grouping of buffer transistors. A first bit line is coupled to up to two buffer transistors of the first grouping and a second bit line is coupled to up to two buffer transistors of the second grouping of buffer transistors at a time. A color filter array including a plurality of groupings of color filters is disposed over respective photodiodes of the photodiode array, wherein each grouping of color filters includes four color filters having a same color, wherein each grouping of color filters overlaps two groupings of photodiodes.

公开(公告)号：US11323608B2

公开(公告)日：2022-05-03

申请号：US16597901

申请日：2019-10-10

Applicant: OmniVision Technologies, Inc.

Inventor： Chin Poh Pang ,  Chen-Wei Lu ,  Shao-Fan Kao ,  Chun-Yung Ai ,  Yin Qian ,  Dyson Tai ,  Qingwei Shan ,  Lindsay Grant

IPC: H04N5/232 ,  H01L27/146

Abstract: An image sensor pixel array comprises a plurality of image pixel units to gather image information and a plurality of phase detection auto-focus (PDAF) pixel units to gather phase information. Each of the PDAF pixel units includes two of first image sensor pixels covered by two micro-lenses, respectively. Each of the image pixel units includes four of second image sensor pixels adjacent to each other, wherein each of the second image sensor pixels is covered by an individual micro-lens. A coating layer is disposed on the micro-lenses and forms a flattened surface across the whole image sensor pixel array. A PDAF micro-lens is formed on the coating layer to cover the first image sensor pixels.

公开(公告)号：US20200045223A1

公开(公告)日：2020-02-06

申请号：US16597901

申请日：2019-10-10

Applicant: OmniVision Technologies, Inc.

Inventor： Chin Poh Pang ,  Chen-Wei Lu ,  Shao-Fan Kao ,  Chun-Yung Ai ,  Yin Qian ,  Dyson Tai ,  Qingwei Shan ,  Lindsay Grant

IPC: H04N5/232 ,  H01L27/146

Abstract: An image sensor pixel array comprises a plurality of image pixel units to gather image information and a plurality of phase detection auto-focus (PDAF) pixel units to gather phase information. Each of the PDAF pixel units includes two of first image sensor pixels covered by two micro-lenses, respectively. Each of the image pixel units includes four of second image sensor pixels adjacent to each other, wherein each of the second image sensor pixels is covered by an individual micro-lens. A coating layer is disposed on the micro-lenses and forms a flattened surface across the whole image sensor pixel array. A PDAF micro-lens is formed on the coating layer to cover the first image sensor pixels.

公开(公告)号：US20150108507A1

公开(公告)日：2015-04-23

申请号：US14056132

申请日：2013-10-17

Applicant: OmniVision Technologies, Inc.

Inventor： Qingfei Chen ,  Qingwei Shan ,  Yin Qian ,  Dyson H. Tai

IPC: H01L27/146 ,  H01L31/12

CPC classification number: H01L27/14609 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14683 ,  H01L31/125

Abstract: A backside illuminated image sensor includes a semiconductor layer having a back-side surface and a front-side surface. The semiconductor layer includes a pixel array region including a plurality of photodiodes configured to receive image light through the back-side surface of the semiconductor layer. The semiconductor layer also includes a peripheral circuit region including peripheral circuit elements for operating the plurality of photodiodes that borders the pixel array region. The peripheral circuit elements emit photons. The peripheral circuit region also includes a doped semiconductor region positioned to absorb the photons emitted by the peripheral circuit elements to prevent the plurality of photodiodes from receiving the photons.

Abstract translation: 背面照明图像传感器包括具有背面和前侧面的半导体层。 半导体层包括像素阵列区域，该像素阵列区域包括被配置为通过半导体层的背面接收图像光的多个光电二极管。 半导体层还包括外围电路区域，其包括用于操作与像素阵列区域相邻的多个光电二极管的外围电路元件。 外围电路元件发射光子。 外围电路区域还包括被配置为吸收由外围电路元件发射的光子以防止多个光电二极管接收光子的掺杂半导体区域。

公开(公告)号：US11356630B2

公开(公告)日：2022-06-07

申请号：US16855854

申请日：2020-04-22

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Qingfei Chen ,  Chin Poh Pang ,  Qingwei Shan

IPC: H04N5/378 ,  H04N5/3745 ,  H01L27/146

Abstract: An imaging device includes a first pixel circuit having a first plurality of photodiodes that includes a phase detection autofocus photodiode with image sensing photodiodes. A first buffer transistor having a first threshold voltage is coupled to the first plurality of photodiodes to generate a first output signal. A second pixel circuit is included having a second plurality of photodiodes that are all image sensing photodiodes. A second buffer transistor having a second threshold voltage is coupled to the second plurality of photodiodes to generate a second output signal. The first threshold voltage is less than the second threshold voltage. A driver is coupled to receive a combination of the first and second output signals to generate a total output signal. An influence of the first output signal dominates the second output signal in the total output signal because the first threshold voltage is less than the second threshold voltage.