公开(公告)号：US20150115131A1

公开(公告)日：2015-04-30

申请号：US14065275

申请日：2013-10-28

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Eric A.G. Webster ,  Tiejun Dai

IPC: H01L27/146

CPC classification number: H01L27/14603 ,  H01L27/14609 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/14643 ,  H04N5/369 ,  H04N5/37455 ,  H04N5/378

Abstract: An example imaging sensor system includes a Single-Photon Avalanche Diode (SPAD) imaging array formed in a first semiconductor layer of a first wafer. The SPAD imaging array includes an N number of pixels, each including a SPAD region formed in a front side of the first semiconductor layer. The first wafer is bonded to a second wafer at a bonding interface between a first interconnect layer of the first wafer and the second interconnect layer of the second wafer. An N number of digital counters are formed in a second semiconductor layer of the second wafer. Each of the digital counters are configured to count output pulses generated by a respective SPAD region.

Abstract translation: 示例性成像传感器系统包括形成在第一晶片的第一半导体层中的单光子雪崩二极管（SPAD）成像阵列。 SPAD成像阵列包括N个像素，每个像素包括形成在第一半导体层的前侧的SPAD区域。 第一晶片在第一晶片的第一互连层和第二晶片的第二互连层之间的接合界面处接合到第二晶片。 N个数字计数器形成在第二晶片的第二半导体层中。 每个数字计数器被配置为对相应SPAD区域产生的输出脉冲进行计数。