公开(公告)号：US11335821B2

公开(公告)日：2022-05-17

申请号：US16863771

申请日：2020-04-30

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Mamoru Iesaka ,  Woon Il Choi ,  Sohei Manabe

IPC: H01L31/028 ,  H01L27/146

Abstract: Low noise silicon-germanium (SiGe) image sensor. In one embodiment, an image sensor includes a plurality of pixels arranged in rows and columns of a pixel array disposed in a semiconductor substrate. The photodiodes of an individual pixel are configured to receive an incoming light through an illuminated surface of the semiconductor substrate. The semiconductor substrate includes a first layer of semiconductor material having silicon (Si); and a second layer of semiconductor material having silicon germanium (Si1-xGex). A concentration x of Ge changes gradually through at least a portion of thickness of the second layer. Each photodiode includes a first doped region extending through the first layer of semiconductor material and the second layer of semiconductor material; and a second doped region extending through the first layer of semiconductor material and the second layer of semiconductor material.

公开(公告)号：US20210343882A1

公开(公告)日：2021-11-04

申请号：US16863771

申请日：2020-04-30

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Mamoru Iesaka ,  Woon Il Choi ,  Sohei Manabe

IPC: H01L31/028 ,  H01L27/146

Abstract: Low noise silicon-germanium (SiGe) image sensor. In one embodiment, an image sensor includes a plurality of pixels arranged in rows and columns of a pixel array disposed in a semiconductor substrate. The photodiodes of an individual pixel are configured to receive an incoming light through an illuminated surface of the semiconductor substrate. The semiconductor substrate includes a first layer of semiconductor material having silicon (Si); and a second layer of semiconductor material having silicon germanium (Si1-xGex). A concentration x of Ge changes gradually through at least a portion of thickness of the second layer. Each photodiode includes a first doped region extending through the first layer of semiconductor material and the second layer of semiconductor material; and a second doped region extending through the first layer of semiconductor material and the second layer of semiconductor material.