公开(公告)号：US20230245977A1

公开(公告)日：2023-08-03

申请号：US18162066

申请日：2023-01-31

Applicant: OmniVision Technologies, Inc.

Inventor： Qin Wang ,  Yu Jin

IPC: H01L23/544 ,  H01L27/146

CPC classification number: H01L23/544 ,  H01L27/14683 ,  H01L27/14643

Abstract: The present disclosure provides an alignment method for image sensor fabrication that involve forming a number of set of alignment marks using key process mask layers to improve alignment registration between process mask layers so as to reduce number of alignment transfer improves alignment accuracy between pixel elements. The present disclosure further provides a semiconductor device that includes such alignment mark structures.

公开(公告)号：US20240194719A1

公开(公告)日：2024-06-13

申请号：US18079201

申请日：2022-12-12

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Qin Wang ,  Yu Jin

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14603 ,  H01L27/14612 ,  H01L27/14689

Abstract: An image sensor including a plurality of photodiodes disposed within a semiconductor substrate proximate to a first side of the semiconductor substrate, a first transfer gate and a second transfer gate that are each disposed proximate to the first side of the semiconductor substrate and coupled to a respective one of the plurality of photodiodes, and a floating diffusion region coupled to the first transfer gate and the second transfer gate is described. The first transfer gate is laterally separated from the second transfer gate by a separation distance. The floating diffusion region extends laterally within the semiconductor substrate a distance greater than the separation distance between the first transfer gate and the second transfer gate. The floating diffusion region includes a central portion surrounded by a peripheral portion. A first dopant concentration of the central portion is greater than a second dopant concentration of the peripheral portion.

公开(公告)号：US20240297194A1

公开(公告)日：2024-09-05

申请号：US18177684

申请日：2023-03-02

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Qin Wang ,  Yu Jin

IPC: H01L27/146 ,  H04N25/78

CPC classification number: H01L27/1463 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14683 ,  H04N25/78

Abstract: A pixel cell includes a front deep trench isolation (FDTI) structure extending into a semiconductor material from a frontside. The FDTI structure isolates a first region of the semiconductor material from a second region of the semiconductor material. The FDTI structure includes a first conductive material coupled to receive a first bias voltage. A back deep trench isolation (BDTI) extends into the semiconductor material from a backside. The BDTI structure isolates the first region of the semiconductor material from the second region of the semiconductor material. The BDTI structure includes a second conductive material coupled to receive a second bias voltage. The FDTI structure and BDTI structure are at least partially aligned in a depthwise direction of the semiconductor material. A photodiode is disposed in the first region of the semiconductor material proximate to at least a portion of the FDTI structure and a portion of the BDTI structure.