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公开(公告)号：US20240297194A1
公开(公告)日：2024-09-05
申请号：US18177684
申请日：2023-03-02
Applicant: OMNIVISION TECHNOLOGIES, INC.
IPC: H01L27/146 , H04N25/78
CPC classification number: H01L27/1463 , H01L27/14636 , H01L27/14643 , H01L27/14683 , H04N25/78
Abstract: A pixel cell includes a front deep trench isolation (FDTI) structure extending into a semiconductor material from a frontside. The FDTI structure isolates a first region of the semiconductor material from a second region of the semiconductor material. The FDTI structure includes a first conductive material coupled to receive a first bias voltage. A back deep trench isolation (BDTI) extends into the semiconductor material from a backside. The BDTI structure isolates the first region of the semiconductor material from the second region of the semiconductor material. The BDTI structure includes a second conductive material coupled to receive a second bias voltage. The FDTI structure and BDTI structure are at least partially aligned in a depthwise direction of the semiconductor material. A photodiode is disposed in the first region of the semiconductor material proximate to at least a portion of the FDTI structure and a portion of the BDTI structure.
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公开(公告)号：US11990496B2
公开(公告)日：2024-05-21
申请号：US17568909
申请日：2022-01-05
Applicant: OMNIVISION TECHNOLOGIES, INC.
IPC: H01L27/146
CPC classification number: H01L27/14638 , H01L27/1463
Abstract: Pixels, such as for image sensors and electronic devices, include a photodiode formed in a semiconductor substrate, a floating diffusion, and a transfer structure selectively coupling the photodiode to the floating diffusion. The transfer structure includes a transfer gate formed on the semiconductor substrate, and a vertical channel structure including spaced apart first doped regions formed in the semiconductor substrate between the transfer gate and the photodiode. Each spaced apart first doped region is doped at a first dopant concentration with a first-type dopant. The spaced apart first doped regions are formed in a second doped region doped at a second dopant concentration with a second-type dopant of a different conductive type.
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公开(公告)号：US11984463B2
公开(公告)日：2024-05-14
申请号：US17464192
申请日：2021-09-01
Applicant: OmniVision Technologies, Inc.
IPC: H01L27/146 , G02B1/10 , G02B3/00 , G02B5/30
CPC classification number: H01L27/1462 , G02B1/10 , G02B3/0037 , G02B5/3083 , H01L27/14627 , H01L27/14643
Abstract: A flare-reducing image sensor includes a plurality of pixels, NP in number, and a plurality of microlenses, NML in number, where each of the plurality of microlenses is aligned to a respective one of the plurality of pixels, such that NP=NML. The flare-reducing image sensor further includes a plurality of phase-shifting layers, NL, in number, where each phase-shifting layer is aligned with a respective one of the plurality of microlenses, where NL, is less than or equal to NML.
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公开(公告)号：US20230314681A1
公开(公告)日：2023-10-05
申请号：US17713593
申请日：2022-04-05
Applicant: OMNIVISION TECHNOLOGIES, INC.
Inventor： Qin Wang , Chin Poh Pang , Gang Chen
IPC: G02B5/30 , H01L27/146
CPC classification number: G02B5/3058 , H01L27/14627 , H01L27/14643 , H01L27/14621
Abstract: Image sensors and devices for phase-detection auto focus processes are provided. A symmetric polarization filter includes a first polarizer defining a first plurality of apertures and a second polarizer adjacent with the first polarizer defining a second plurality of apertures. The first plurality of apertures can be mirror symmetrical with the second plurality of apertures about a lateral axis of the symmetric polarization filter between the first polarizer and the second polarizer. The lateral axis can be defined as an axis of symmetry of the symmetric polarization filter in plane with the first polarizer and the second polarizer.
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公开(公告)号：US11658199B2
公开(公告)日：2023-05-23
申请号：US16998815
申请日：2020-08-20
Applicant: OMNIVISION TECHNOLOGIES, INC.
IPC: H01L27/146
CPC classification number: H01L27/14643 , H01L27/14603 , H01L27/14609
Abstract: A device includes a photodiode, a floating diffusion region, a transfer gate, and a channel region. The photodiode is disposed in a semiconductor material. The photodiode is coupled to generate charges in response to incident light. The photodiode has a substantially uniform doping profile throughout a depth of the photodiode in the semiconductor material. The floating diffusion region is disposed in the semiconductor material. The transfer gate is disposed between the photodiode and the floating diffusion region, wherein the transfer gate includes a plurality of fin structures. The channel region associated with the transfer gate is in the semiconductor material proximate to the transfer gate. The transfer gate is coupled to transfer the charge from the photodiode to the floating diffusion region through the channel region in response to a transfer signal coupled to be received by the transfer gate.
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Patent Agency Ranking
公开(公告)号：US10964741B1
公开(公告)日：2021-03-30
申请号：US16575269
申请日：2019-09-18
Applicant: OMNIVISION TECHNOLOGIES, INC.
IPC: H01L27/146
Abstract: Backside illuminated sensor pixel structure. In one embodiment, an image sensor includes a plurality of photodiodes arranged in rows and columns of a pixel array that are disposed in a semiconductor substrate. Individual photodiodes of the pixel array are configured to receive incoming light through a backside of the semiconductor substrate. The individual photodiodes have a diffusion region formed in an epitaxial region and a plurality of storage nodes (SGs) that are disposed on the front side of the semiconductor substrate and formed in the epitaxial region. An opaque isolation layer having a plurality of opaque isolation elements is disposed proximate to the front side of the semiconductor substrate and proximate to the diffusion region of the plurality of photodiodes. The opaque isolation elements are configured to block a path of incoming light from the backside of the semiconductor substrate toward the storage nodes.
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公开(公告)号：US10566377B2
公开(公告)日：2020-02-18
申请号：US16130309
申请日：2018-09-13
Applicant: OmniVision Technologies, Inc.
Inventor： Xin Wang , Dajing Yang , Qin Wang , Duli Mao , Dyson Hsin-Chih Tai
IPC: H01L27/146
Abstract: An image sensor includes a substrate, a plurality of light sensitive pixels, a first plurality of color filters, a plurality of reflective sidewalls, and a second plurality of color filters. The light sensitive pixels are formed on said substrate. The first plurality of color filters is disposed over a first group of the light sensitive pixels. The reflective sidewalls are formed on each side of each of the first plurality of color filters. The second plurality of color filters are disposed over a second group of light sensitive pixels and each color filter of the second plurality of color filters is separated from each adjacent filter of said first plurality of color filters by one of the reflective sidewalls. In a particular embodiment an etch-resistant layer is disposed over the first plurality of color filters and the second group of light sensitive pixels.
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公开(公告)号：US20190165033A1
公开(公告)日：2019-05-30
申请号：US16242924
申请日：2019-01-08
Applicant: OmniVision Technologies, Inc.
IPC: H01L27/146 , H01L23/00 , H01L27/148 , H01L21/768
Abstract: An image sensor includes a plurality of photodiodes disposed in a semiconductor material to convert image light into image charge, and a metal grid, including a metal shield that is coplanar with the metal grid, disposed proximate to a backside of the semiconductor material. The metal grid is optically aligned with the plurality of photodiodes to direct the image light into the plurality of photodiodes, and a contact pad is disposed in a trench in the semiconductor material. The contact pad is coupled to the metal shield to ground the metal shield.
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公开(公告)号：US10211253B1
公开(公告)日：2019-02-19
申请号：US15826276
申请日：2017-11-29
Applicant: OmniVision Technologies, Inc.
IPC: H01L27/146 , H01L27/148 , H01L21/768 , H01L23/00
Abstract: An image sensor includes a plurality of photodiodes disposed in a semiconductor material to convert image light into image charge, and a metal grid, including a metal shield that is coplanar with the metal grid, disposed proximate to a backside of the semiconductor material. The metal grid is optically aligned with the plurality of photodiodes to direct the image light into the plurality of photodiodes, and a contact pad is disposed in a trench in the semiconductor material. The contact pad is coupled to the metal shield to ground the metal shield.
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公开(公告)号：US20190013348A1
公开(公告)日：2019-01-10
申请号：US16130309
申请日：2018-09-13
Applicant: OmniVision Technologies, Inc.
Inventor： Xin Wang , Dajiang Yang , Qin Wang , Duli Mao , Dyson Hsin-Chih Tai
IPC: H01L27/146
CPC classification number: H01L27/14685 , H01L27/14621 , H01L27/14629
Abstract: An image sensor includes a substrate, a plurality of light sensitive pixels, a first plurality of color filters, a plurality of reflective sidewalls, and a second plurality of color filters. The light sensitive pixels are formed on said substrate. The first plurality of color filters is disposed over a first group of the light sensitive pixels. The reflective sidewalls are formed on each side of each of the first plurality of color filters. The second plurality of color filters are disposed over a second group of light sensitive pixels and each color filter of the second plurality of color filters is separated from each adjacent filter of said first plurality of color filters by one of the reflective sidewalls. In a particular embodiment an etch-resistant layer is disposed over the first plurality of color filters and the second group of light sensitive pixels.
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