公开(公告)号：US20200350207A1

公开(公告)日：2020-11-05

申请号：US16758659

申请日：2018-10-25

Applicant: OSRAM OLED GmbH

Inventor： Thomas Schwarz ,  Lutz Höppel ,  Thorsten Frank Baumheinrich ,  Jens Richter

IPC: H01L21/78 ,  H01L25/16

Abstract: The method of manufacturing a plurality of semiconductor chips (100) comprises a step A) of providing a semiconductor substrate (1) having a plurality of integrated electronic circuits (2) on a top side (10) thereof. In a step B), a sacrificial layer (3) is applied on one side of the semiconductor substrate. In a step C), holes (30) are introduced in the sacrificial layer so that at least one hole is formed above each electronic circuit. In a step D), the semiconductor substrate is adhered to a carrier (5) with the sacrificial layer at the front, an adhesive layer (4) being used between the sacrificial layer and the carrier, and the adhesive layer filling the holes so that holding elements (40) from the adhesive layer are formed in the holes. In a step E) the semiconductor substrate is thinned. In a step F) separation trenches (6) are introduced between the electronic circuits, which extend from a side of the electronic circuits facing away from the carrier to the sacrificial layer and penetrate the thinned semiconductor substrate. In a step G) the sacrificial layer is removed in the region between the electronic circuits and the carrier.

公开(公告)号：US11251081B2

公开(公告)日：2022-02-15

申请号：US16758659

申请日：2018-10-25

Applicant: OSRAM OLED GmbH

Inventor： Thomas Schwarz ,  Lutz Höppel ,  Thorsten Frank Baumheinrich ,  Jens Richter

IPC: H01L21/78 ,  H01L25/16

Abstract: The method of manufacturing a plurality of semiconductor chips (100) comprises a step A) of providing a semiconductor substrate (1) having a plurality of integrated electronic circuits (2) on a top side (10) thereof. In a step B), a sacrificial layer (3) is applied on one side of the semiconductor substrate. In a step C), holes (30) are introduced in the sacrificial layer so that at least one hole is formed above each electronic circuit. In a step D), the semiconductor substrate is adhered to a carrier (5) with the sacrificial layer at the front, an adhesive layer (4) being used between the sacrificial layer and the carrier, and the adhesive layer filling the holes so that holding elements (40) from the adhesive layer are formed in the holes. In a step E) the semiconductor substrate is thinned. In a step F) separation trenches (6) are introduced between the electronic circuits, which extend from a side of the electronic circuits facing away from the carrier to the sacrificial layer and penetrate the thinned semiconductor substrate. In a step G) the sacrificial layer is removed in the region between the electronic circuits and the carrier.