公开(公告)号：US11430378B2

公开(公告)日：2022-08-30

申请号：US17264661

申请日：2019-08-21

申请人： OSRAM OLED GmbH

发明人： Jens Richter ,  Kilian Regau ,  Patrick Hörner

IPC分类号： G09G3/32 ,  G09G3/00 ,  H01L25/075 ,  H01L27/12 ,  H01L33/00 ,  H01L33/62

摘要： A display includes a plurality of pixels. The pixels include at least one emitter unit. The emitter units each include a primary emitter and a secondary emitter for generating light of the same color. The secondary emitter is associated with the primary emitter of the corresponding emitter unit. The primary emitters and the secondary emitters are based on at least one semiconductor material. The emitter units each include a correction circuit. The correction circuits are each configured to be able to switch the generation of light from the primary emitter to the associated secondary emitter in case of a defect of the associated primary emitter.

公开(公告)号：US20200350207A1

公开(公告)日：2020-11-05

申请号：US16758659

申请日：2018-10-25

申请人： OSRAM OLED GmbH

发明人： Thomas Schwarz ,  Lutz Höppel ,  Thorsten Frank Baumheinrich ,  Jens Richter

IPC分类号： H01L21/78 ,  H01L25/16

摘要： The method of manufacturing a plurality of semiconductor chips (100) comprises a step A) of providing a semiconductor substrate (1) having a plurality of integrated electronic circuits (2) on a top side (10) thereof. In a step B), a sacrificial layer (3) is applied on one side of the semiconductor substrate. In a step C), holes (30) are introduced in the sacrificial layer so that at least one hole is formed above each electronic circuit. In a step D), the semiconductor substrate is adhered to a carrier (5) with the sacrificial layer at the front, an adhesive layer (4) being used between the sacrificial layer and the carrier, and the adhesive layer filling the holes so that holding elements (40) from the adhesive layer are formed in the holes. In a step E) the semiconductor substrate is thinned. In a step F) separation trenches (6) are introduced between the electronic circuits, which extend from a side of the electronic circuits facing away from the carrier to the sacrificial layer and penetrate the thinned semiconductor substrate. In a step G) the sacrificial layer is removed in the region between the electronic circuits and the carrier.

公开(公告)号：US11251081B2

公开(公告)日：2022-02-15

申请号：US16758659

申请日：2018-10-25

申请人： OSRAM OLED GmbH

发明人： Thomas Schwarz ,  Lutz Höppel ,  Thorsten Frank Baumheinrich ,  Jens Richter

IPC分类号： H01L21/78 ,  H01L25/16

摘要： The method of manufacturing a plurality of semiconductor chips (100) comprises a step A) of providing a semiconductor substrate (1) having a plurality of integrated electronic circuits (2) on a top side (10) thereof. In a step B), a sacrificial layer (3) is applied on one side of the semiconductor substrate. In a step C), holes (30) are introduced in the sacrificial layer so that at least one hole is formed above each electronic circuit. In a step D), the semiconductor substrate is adhered to a carrier (5) with the sacrificial layer at the front, an adhesive layer (4) being used between the sacrificial layer and the carrier, and the adhesive layer filling the holes so that holding elements (40) from the adhesive layer are formed in the holes. In a step E) the semiconductor substrate is thinned. In a step F) separation trenches (6) are introduced between the electronic circuits, which extend from a side of the electronic circuits facing away from the carrier to the sacrificial layer and penetrate the thinned semiconductor substrate. In a step G) the sacrificial layer is removed in the region between the electronic circuits and the carrier.