公开(公告)号：US20190229497A1

公开(公告)日：2019-07-25

申请号：US16091172

申请日：2017-04-07

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Clemens VIERHEILIG ,  Alfred LELL ,  Sven GERHARD ,  Andreas LOEFFLER

IPC: H01S5/20 ,  H01S5/22 ,  H01S5/10 ,  H01S5/343

Abstract: The invention relates to a semiconductor laser comprising a layer structure comprising an active zone, wherein the active zone is configured to generate an electromagnetic radiation, wherein the layer structure comprises a sequence of layers, wherein two opposite end faces are provided in a Z-direction, wherein at least one end face is configured to at least partly couple out the electromagnetic radiation, and wherein the second end face is configured to at least partly reflect the electromagnetic radiation, wherein guide means are provided for forming an optical mode in a mode space between the end faces, wherein means are provided which hinder a formation of an optical mode outside the mode space, in particular modes comprising a propagation direction which do not extend perpendicularly to the end faces.

公开(公告)号：US20190393676A1

公开(公告)日：2019-12-26

申请号：US15761419

申请日：2016-09-27

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Sven GERHARD ,  Alfred LELL ,  Clemens VIERHEILIG ,  Andreas LOEFFLER ,  Christoph EICHLER

IPC: H01S5/16 ,  H01S5/028 ,  H01S5/042 ,  H01S5/32 ,  H01S5/323

Abstract: The invention relates to a semiconductor laser (1) comprising a semiconductor layer sequence (2) with an n-type n-region (21), a p-type p-region (23) and an active zone (22) lying between the two for the purpose of generating laser radiation. A p-contact layer (3) that is permeable to the laser radiation and consists of a transparent conductive oxide is located directly on the p-region (23) for the purpose of current input. An electrically-conductive metallic p-contact structure (4) is applied directly to the p-contact layer (3). The p-contact layer (3) is one part of a cover layer, and therefore the laser radiation penetrates as intended into the p-contact layer (3) during operation of the semi-conductor laser (1). Two facets (25) of the semiconductor layer sequence (2) form resonator end surfaces for the laser radiation. Current input into the p-region (23) is inhibited in at least one current protection region (5) directly on at least one of the facets (25). Said current protection region has, in the direction running perpendicularly to the associated facets (25), an extension of at least 0.5 μm and at most 100 μm, and additionally of at least 20% of a resonator length for the laser radiation.