公开(公告)号：US20210119408A1

公开(公告)日：2021-04-22

申请号：US16628050

申请日：2018-07-26

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： John BRÜCKNER ,  Sven GERHARD

IPC: H01S5/02 ,  H01S5/22

Abstract: A method of producing a plurality of laser diodes includes providing a plurality of laser bars in a composite, wherein the laser bars each include a plurality of laser diode elements arranged side by side, and the laser diode elements include a common substrate and a semiconductor layer sequence arranged on the substrate, and a division of the composite at a longitudinal separation plane extending between two adjacent laser bars leads to formation of laser facets of the laser diodes to be produced, and structuring the composite at at least one longitudinal separation plane, wherein a structured region is produced in the substrate.

公开(公告)号：US20220200241A1

公开(公告)日：2022-06-23

申请号：US17441868

申请日：2020-03-11

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Sven GERHARD ,  Bernhard STOJETZ

IPC: H01S5/22 ,  H01S5/20 ,  H01S5/00 ,  H01S5/12

Abstract: The invention relates to an edge-emitting semiconductor laser diode, having: —a semiconductor layer sequence, which comprises a bottom surface, a ridge waveguide on a top surface facing away from the bottom surface, and a side surface which is arranged transverse to the top surface, and —a first recess, which extends from the bottom surface to the top surface, wherein —a first region of the semiconductor layer sequence is removed from the side surface in the region of the first recess. The invention further relates to a method for producing a plurality of edge-emitting semiconductor laser diodes.

公开(公告)号：US20190229497A1

公开(公告)日：2019-07-25

申请号：US16091172

申请日：2017-04-07

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Clemens VIERHEILIG ,  Alfred LELL ,  Sven GERHARD ,  Andreas LOEFFLER

IPC: H01S5/20 ,  H01S5/22 ,  H01S5/10 ,  H01S5/343

Abstract: The invention relates to a semiconductor laser comprising a layer structure comprising an active zone, wherein the active zone is configured to generate an electromagnetic radiation, wherein the layer structure comprises a sequence of layers, wherein two opposite end faces are provided in a Z-direction, wherein at least one end face is configured to at least partly couple out the electromagnetic radiation, and wherein the second end face is configured to at least partly reflect the electromagnetic radiation, wherein guide means are provided for forming an optical mode in a mode space between the end faces, wherein means are provided which hinder a formation of an optical mode outside the mode space, in particular modes comprising a propagation direction which do not extend perpendicularly to the end faces.

公开(公告)号：US20220131341A1

公开(公告)日：2022-04-28

申请号：US17437150

申请日：2020-02-13

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Sven GERHARD ,  Christoph EICHLER ,  Alfred LELL ,  Muhammad ALI

IPC: H01S5/042 ,  H01S5/22 ,  H01S5/343 ,  H01S5/026 ,  H01L33/62

Abstract: The invention relates to a semiconductor laser diode, which comprises a semiconductor layer sequence grown in a vertical direction and having an active layer that is configured and provided to generate light during operation in at least one active region extending in a longitudinal direction, and which comprises a transparent electrically conductive cover layer on the semiconductor layer sequence, wherein the semiconductor layer sequence terminates in a vertical direction with a top side, and the top side has a contact region arranged in the vertical direction above the active region and at least one cover region directly adjoining the contact region in a lateral direction perpendicular to the vertical and longitudinal directions, the cover layer is applied contiguously to the contact region and the at least one cover region on the top side, the cover layer is applied directly to the top side of the semiconductor layer sequence at least in the at least one cover region, and at least one element defining the at least one active region is present which is covered by the cover layer. The invention further relates to a method of manufacturing a semiconductor laser diode.

公开(公告)号：US20190393676A1

公开(公告)日：2019-12-26

申请号：US15761419

申请日：2016-09-27

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Sven GERHARD ,  Alfred LELL ,  Clemens VIERHEILIG ,  Andreas LOEFFLER ,  Christoph EICHLER

IPC: H01S5/16 ,  H01S5/028 ,  H01S5/042 ,  H01S5/32 ,  H01S5/323

Abstract: The invention relates to a semiconductor laser (1) comprising a semiconductor layer sequence (2) with an n-type n-region (21), a p-type p-region (23) and an active zone (22) lying between the two for the purpose of generating laser radiation. A p-contact layer (3) that is permeable to the laser radiation and consists of a transparent conductive oxide is located directly on the p-region (23) for the purpose of current input. An electrically-conductive metallic p-contact structure (4) is applied directly to the p-contact layer (3). The p-contact layer (3) is one part of a cover layer, and therefore the laser radiation penetrates as intended into the p-contact layer (3) during operation of the semi-conductor laser (1). Two facets (25) of the semiconductor layer sequence (2) form resonator end surfaces for the laser radiation. Current input into the p-region (23) is inhibited in at least one current protection region (5) directly on at least one of the facets (25). Said current protection region has, in the direction running perpendicularly to the associated facets (25), an extension of at least 0.5 μm and at most 100 μm, and additionally of at least 20% of a resonator length for the laser radiation.