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公开(公告)号：US20160079733A1
公开(公告)日：2016-03-17
申请号：US14951149
申请日：2015-11-24
发明人： Alfred LELL , Christoph EICHLER , Wolfgang SCHMID , Soenke TAUTZ , Wolfgang REILL , Dimitri DINI
CPC分类号： H01S5/1082 , H01S5/0078 , H01S5/028 , H01S5/0282 , H01S5/0286 , H01S5/1017 , H01S5/105 , H01S5/1078 , H01S5/1092 , H01S5/22 , H01S2301/02 , H01S2301/166
摘要： A laser light source, comprising a semiconductor layer sequence having an active region and a radiation coupling out area having first and second partial regions, and a filter structure. The active region generates coherent first electromagnetic radiation and incoherent second electromagnetic radiation. The coherent first electromagnetic radiation is emitted by the first partial region along an emission direction, and the incoherent second electromagnetic radiation is emitted by the first partial region and by the second partial region. The filter structure at least partly attenuates the incoherent second electromagnetic radiation emitted by the active region along the emission direction. The filter structure comprises at least one first filter element disposed downstream of the semiconductor layer sequence in the emission direction and it has at least one layer comprising a material that is non-transparent to electromagnetic radiation.
摘要翻译： 一种激光源，包括具有有源区的半导体层序列和具有第一和第二部分区域的辐射耦合输出区域和滤波器结构。 有源区产生相干的第一电磁辐射和非相干的第二电磁辐射。 相干第一电磁辐射沿着发射方向由第一部分区域发射，并且非相干的第二电磁辐射由第一部分区域和第二部分区域发射。 滤波器结构至少部分地衰减沿着发射方向由有源区发射的非相干的第二电磁辐射。 滤波器结构包括至少一个第一滤波器元件，其布置在发射方向上的半导体层序列的下游，并且其具有至少一个包括对电磁辐射不透明的材料的层。
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公开(公告)号：US20220131341A1
公开(公告)日：2022-04-28
申请号：US17437150
申请日：2020-02-13
发明人： Sven GERHARD , Christoph EICHLER , Alfred LELL , Muhammad ALI
摘要： The invention relates to a semiconductor laser diode, which comprises a semiconductor layer sequence grown in a vertical direction and having an active layer that is configured and provided to generate light during operation in at least one active region extending in a longitudinal direction, and which comprises a transparent electrically conductive cover layer on the semiconductor layer sequence, wherein the semiconductor layer sequence terminates in a vertical direction with a top side, and the top side has a contact region arranged in the vertical direction above the active region and at least one cover region directly adjoining the contact region in a lateral direction perpendicular to the vertical and longitudinal directions, the cover layer is applied contiguously to the contact region and the at least one cover region on the top side, the cover layer is applied directly to the top side of the semiconductor layer sequence at least in the at least one cover region, and at least one element defining the at least one active region is present which is covered by the cover layer. The invention further relates to a method of manufacturing a semiconductor laser diode.
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公开(公告)号：US20190393676A1
公开(公告)日：2019-12-26
申请号：US15761419
申请日：2016-09-27
摘要： The invention relates to a semiconductor laser (1) comprising a semiconductor layer sequence (2) with an n-type n-region (21), a p-type p-region (23) and an active zone (22) lying between the two for the purpose of generating laser radiation. A p-contact layer (3) that is permeable to the laser radiation and consists of a transparent conductive oxide is located directly on the p-region (23) for the purpose of current input. An electrically-conductive metallic p-contact structure (4) is applied directly to the p-contact layer (3). The p-contact layer (3) is one part of a cover layer, and therefore the laser radiation penetrates as intended into the p-contact layer (3) during operation of the semi-conductor laser (1). Two facets (25) of the semiconductor layer sequence (2) form resonator end surfaces for the laser radiation. Current input into the p-region (23) is inhibited in at least one current protection region (5) directly on at least one of the facets (25). Said current protection region has, in the direction running perpendicularly to the associated facets (25), an extension of at least 0.5 μm and at most 100 μm, and additionally of at least 20% of a resonator length for the laser radiation.
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公开(公告)号：US20190319162A1
公开(公告)日：2019-10-17
申请号：US16452015
申请日：2019-06-25
IPC分类号： H01L33/00 , H01L33/26 , H01L33/62 , H01L21/67 , H01L21/687 , H01S5/22 , H01S5/40 , H01S5/10 , H01S5/32
摘要： A semiconductor chip (100) is provided, having a first semiconductor layer (1), which has a lateral variation of a material composition along at least one direction of extent. Additionally provided is a method for producing a semiconductor chip (100).
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公开(公告)号：US20170330757A1
公开(公告)日：2017-11-16
申请号：US15594482
申请日：2017-05-12
发明人： Christoph EICHLER , Andre SOMERS , Harald KOENIG , Bernhard STOJETZ , Andreas LOEFFLER , Alfred LELL
IPC分类号： H01L21/268 , H01L21/324 , H01L21/3105
CPC分类号： H01L27/1285 , H01L21/02104 , H01L21/02293 , H01L21/02365 , H01L21/0254 , H01L21/02617 , H01L21/02636 , H01L21/02647 , H01L21/20 , H01L21/2022 , H01L21/268 , H01L21/3105 , H01L21/3247 , H01L21/76248 , H01L21/76272 , H01L27/1281 , H01L33/007 , H01L33/025 , H01L33/08 , H01L33/12 , H01L2933/0016 , H01S5/2068 , H01S5/2077 , H01S5/222 , H01S5/223 , H01S2304/00
摘要： A method for producing a semiconductor chip (100) is provided, in which, during a growth process for growing a first semiconductor layer (1), an inhomogeneous lateral temperature distribution is created along at least one direction of extent of the growing first semiconductor layer (1), such that a lateral variation of a material composition of the first semiconductor layer (1) is produced. A semiconductor chip (100) is additionally provided.
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公开(公告)号：US20160099547A1
公开(公告)日：2016-04-07
申请号：US14968845
申请日：2015-12-14
CPC分类号： H01S5/1003 , H01S5/0202 , H01S5/0203 , H01S5/0264 , H01S5/0286 , H01S5/1017 , H01S5/1237 , H01S5/2063 , H01S5/22 , H01S2301/166
摘要： A semiconductor laser light source comprising an edge-emitting semiconductor body (10) is provided. The semiconductor body (10) contains a semiconductor layer stack (110) having an n-type layer (111), an active layer (112) and a p-type layer (113) which is formed for generating electromagnetic radiation which comprises a coherent portion (21). The semiconductor laser light source is formed for decoupling the coherent portion (21) of the electromagnetic radiation from a decoupling surface (101) of the semiconductor body (10) which is inclined with respect to the active layer (112). The semiconductor body (10) comprises a further external surface (102A, 102B, 102C) which is inclined with respect to the decoupling surface (101) and has at least one light-diffusing sub-region (12, 12A, 12B, 12C, 120A, 120B) which is provided in order to direct a portion of the electromagnetic radiation generated by the semiconductor layer stack (110) in the direction towards the further external surface (102A, 102B, 102C).
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公开(公告)号：US20160079734A1
公开(公告)日：2016-03-17
申请号：US14951220
申请日：2015-11-24
发明人： Alfred LELL , Christoph EICHLER , Wolfgang SCHMID , Soenke TAUTZ , Wolfgang REILL , Dimitri DINI
CPC分类号： H01S5/1082 , H01S5/0078 , H01S5/028 , H01S5/0282 , H01S5/0286 , H01S5/1017 , H01S5/105 , H01S5/1078 , H01S5/1092 , H01S5/22 , H01S2301/02 , H01S2301/166
摘要： A laser light source, comprising a semiconductor layer sequence having an active region and a radiation coupling out area having first and second partial regions, and a filter structure. The active region generates coherent first electromagnetic radiation and incoherent second electromagnetic radiation. The coherent first electromagnetic radiation is emitted by the first partial region along an emission direction, and the incoherent second electromagnetic radiation is emitted by the first partial region and by the second partial region. The filter structure at least partly attenuates the incoherent second electromagnetic radiation emitted along the emission direction. The filter structure has at least one filter element arranged on an area of the semiconductor layer sequence which has an extension direction parallel to the emission direction. The at least one filter element comprises a surface structure comprising a roughening and/or at least one layer comprising a non-transparent material.
摘要翻译： 一种激光源，包括具有有源区的半导体层序列和具有第一和第二部分区域的辐射耦合输出区域和滤波器结构。 有源区产生相干的第一电磁辐射和非相干的第二电磁辐射。 相干第一电磁辐射沿着发射方向由第一部分区域发射，并且非相干的第二电磁辐射由第一部分区域和第二部分区域发射。 滤波器结构至少部分地衰减沿着发射方向发射的非相干的第二电磁辐射。 滤波器结构具有布置在半导体层序列的具有平行于发射方向的延伸方向的区域上的至少一个滤波器元件。 所述至少一个过滤元件包括表面结构，所述表面结构包括粗糙化和/或至少一层包含不透明材料的层。
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公开(公告)号：US20190355768A1
公开(公告)日：2019-11-21
申请号：US16528307
申请日：2019-07-31
发明人： Christoph EICHLER , Andre SOMERS , Harald KOENIG , Bernhard STOJETZ , Andreas LOEFFLER , Alfred LELL
IPC分类号： H01L27/12 , H01L21/762 , H01L21/268 , H01L21/20 , H01L21/02 , H01L21/3105 , H01L21/324 , H01S5/22 , H01L33/00 , H01L33/02
摘要： A method for producing a semiconductor chip (100) is provided, in which, during a growth process for growing a first semiconductor layer (1), an inhomogeneous lateral temperature distribution is created along at least one direction of extent of the growing first semiconductor layer (1), such that a lateral variation of a material composition of the first semiconductor layer (1) is produced. A semiconductor chip (100) is additionally provided.
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9.发明申请公开(公告)号：US20170331257A1
公开(公告)日：2017-11-16
申请号：US15594397
申请日：2017-05-12
CPC分类号： H01S5/4087 , H01L21/02458 , H01L21/0254 , H01L21/02617 , H01L27/153 , H01L33/0025 , H01L33/0075 , H01L33/0095 , H01L33/32 , H01L33/325 , H01S5/026 , H01S5/1053 , H01S5/1096 , H01S5/22 , H01S5/3013 , H01S5/32341 , H01S2304/00
摘要： A light-emitting semiconductor chip (100) is provided, having a first semiconductor layer (1), which is at least part of an active layer provided for generating light and which has a lateral variation of a material composition along at least one direction of extent. Additionally provided is a method for producing a semiconductor chip (100).
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公开(公告)号：US20170330996A1
公开(公告)日：2017-11-16
申请号：US15594519
申请日：2017-05-12
CPC分类号： H01L33/0025 , H01L21/67115 , H01L21/68764 , H01L21/68771 , H01L33/007 , H01L33/0075 , H01L33/0095 , H01L33/26 , H01L33/32 , H01L33/62 , H01S5/026 , H01S5/1082 , H01S5/2036 , H01S5/2219 , H01S5/222 , H01S5/227 , H01S5/3205 , H01S5/32341 , H01S5/4031 , H01S2301/176 , H01S2301/18
摘要： A semiconductor chip (100) is provided, having a first semiconductor layer (1), which has a lateral variation of a material composition along at least one direction of extent. Additionally provided is a method for producing a semiconductor chip (100).
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