公开(公告)号：US11538963B1

公开(公告)日：2022-12-27

申请号：US16280896

申请日：2019-02-20

Applicant: Ostendo Technologies, Inc.

Inventor： Kameshwar Yadavalli ,  JeongHyuk Park ,  Gregory Batinica ,  Andrew Teren ,  Clarence Crouch ,  Qian Fan ,  Hussein S. El-Ghoroury

IPC: H01L33/44 ,  H01L33/00 ,  H01L33/08 ,  H01L33/42 ,  H01L33/32 ,  H01L33/56 ,  H01L33/52 ,  H01L33/54

Abstract: A multilayer light emitting device having a plurality of low Si—H bonding dielectric layers is disclosed for improved p-GaN contact performance. Improved p-side contact resistance is provided using one or more bonding, via or passivation layers in a multilayer light emitting structure by the use of processes and dielectric materials and precursors that provide dielectric layers with a hydrogen content of less than 13 at. %.