公开(公告)号：US11495714B2

公开(公告)日：2022-11-08

申请号：US17539949

申请日：2021-12-01

Applicant: Ostendo Technologies, Inc.

Inventor： Hussein El-Ghoroury ,  Kameshwar Yadavalli ,  Andrew Teren ,  Qian Fan

IPC: C23C18/20 ,  H01L33/44 ,  H01L33/06 ,  H01L27/15 ,  H01L33/32 ,  H01L33/38 ,  H01L33/12 ,  H01L33/00

Abstract: Solid state light emitting micropixels array structures having hydrogen barrier layers to minimize or eliminate undesirable passivation of doped GaN structures due to hydrogen diffusion.

公开(公告)号：US20170263457A1

公开(公告)日：2017-09-14

申请号：US15452005

申请日：2017-03-07

Applicant: Ostendo Technologies, Inc.

Inventor： Hussein S. El-Ghoroury ,  Minghsuan Liu ,  Kameshwar Yadavalli ,  Weilong Tang ,  Benjamin A. Haskell ,  Hailong Zhou

IPC: H01L21/18 ,  H01L21/687 ,  H01L21/762 ,  H01L21/67

CPC classification number: H01L21/187 ,  H01L21/26 ,  H01L21/67115 ,  H01L21/68764 ,  H01L21/76251 ,  H01L22/12

Abstract: An electromagnetic wave irradiation apparatus and methods to bond unbonded areas in a bonded pair of substrates are disclosed. The unbonded areas between the substrates are eliminated by thermal activation in the unbonded areas induced by electromagnetic wave irradiation having a wavelength selected to effect a phonon or electron excitation. A first substrate of the bonded pair of substrates absorbs the electromagnetic radiation and a portion of a resulting thermal energy transfers to an interface of the bonded pair of substrates at the unbonded areas with sufficient flux to cause opposite sides the first and second substrates to interact and dehydrate to form a bond (e.g., Si—O—Si bond).

公开(公告)号：US20170178891A1

公开(公告)日：2017-06-22

申请号：US15379759

申请日：2016-12-15

Applicant: Ostendo Technologies, Inc.

Inventor： Gregory Batinica ,  Kameshwar Yadavalli ,  Qian Fan ,  Benjamin A. Haskell ,  Hussein S. El-Ghoroury

IPC: H01L21/02 ,  H01L23/00 ,  H01L29/30 ,  H01L29/20 ,  H01L21/66 ,  H01L23/31

CPC classification number: H01L21/02035 ,  H01L21/02002 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02172 ,  H01L21/02274 ,  H01L22/12 ,  H01L22/20 ,  H01L23/3171 ,  H01L23/562 ,  H01L24/94 ,  H01L29/2003 ,  H01L29/30 ,  H01L2224/94 ,  H01L2924/3511

Abstract: A method to improve the planarity of a semiconductor wafer and an assembly made from the method. In a preferred embodiment of the method, a compressive PECVD oxide layer such as SiO2 having a predetermined thickness or pattern is deposited on the second surface of a semiconductor wafer having an undesirable warp or bow. The thickness or pattern of the deposited oxide layer is determined by the measured warp or bow of the semiconductor wafer. The compressive oxide layer induces an offsetting compressive force on the second surface of the semiconductor wafer to reduce the warp and bow across the major surface of the semiconductor wafer.

公开(公告)号：US11195975B2

公开(公告)日：2021-12-07

申请号：US16434042

申请日：2019-06-06

Applicant: Ostendo Technologies, Inc.

Inventor： Hussein S. El-Ghoroury ,  Kameshwar Yadavalli ,  Andrew Teren ,  Qian Fan

IPC: H01L33/44 ,  H01L33/06 ,  H01L27/15 ,  H01L33/32 ,  H01L33/38 ,  H01L33/12 ,  H01L33/00

Abstract: Solid state light emitting micropixels array structures having hydrogen barrier layers to minimize or eliminate undesirable passivation of doped GaN structures due to hydrogen diffusion.

公开(公告)号：US09306116B2

公开(公告)日：2016-04-05

申请号：US14537627

申请日：2014-11-10

Applicant: Ostendo Technologies, Inc.

Inventor： Hussein S. El-Ghoroury ,  Chih-Li Chuang ,  Kameshwar Yadavalli ,  Qian Fan

IPC: H01L21/00 ,  H01L33/00 ,  H01L27/146 ,  H01L21/18

CPC classification number: H01L33/0079 ,  H01L21/187 ,  H01L27/14618 ,  H01L27/14683 ,  H01L33/0066 ,  H01L33/0095 ,  H01L2924/0002 ,  H01L2924/351 ,  H01L2933/0066 ,  H01L2924/00

Abstract: Methods for bonding semiconductor wafers requiring the transfer of electrical and optical signals between the bonded wafers and across the bonding interface by interfusing optical interconnects on one wafer with optical interconnects on a second wafer, interfusing electrical interconnects on one wafer with electrical interconnects on the second wafer, and interfusing a dielectric intermediary bonding layer on one wafer with the dielectric intermediary bonding layer on the second wafer to bond the wafers together with electrical interconnections and optical interconnections between the wafers. The methods are also applicable to the bonding of semiconductor wafers to provide a high density of electrical interconnects between wafers.

Abstract translation: 通过将一个晶片上的光学互连件与第二晶片上的光学互连件连接在一起，将在一个晶片上的电互连与第二晶片上的电互连相连接的半导体晶片的接合需要在接合的晶片之间和结合界面之间传送电和光信号的方法 并且将一个晶片上的电介质中间键合层与第二晶片上的电介质中间键合层进行接合，以将晶片与晶片之间的电互连和光学互连结合在一起。 这些方法也适用于半导体晶片的结合，以在晶片之间提供高密度的电互连。

公开(公告)号：US20150072450A1

公开(公告)日：2015-03-12

申请号：US14537627

申请日：2014-11-10

Applicant: Ostendo Technologies, Inc.

Inventor： Hussein S. El-Ghoroury ,  Chih-Li Chuang ,  Kameshwar Yadavalli ,  Qian Fan

IPC: H01L33/00

CPC classification number: H01L33/0079 ,  H01L21/187 ,  H01L27/14618 ,  H01L27/14683 ,  H01L33/0066 ,  H01L33/0095 ,  H01L2924/0002 ,  H01L2924/351 ,  H01L2933/0066 ,  H01L2924/00

Abstract: Methods for bonding semiconductor wafers requiring the transfer of electrical and optical signals between the bonded wafers and across the bonding interface. The methods for bonding of semiconductor wafers incorporate the formation of both electrical and optical interconnect vias within the wafer bonding interface to transfer electrical and optical signals between the bonded wafers. The electrical vias are formed across the bonding surface using multiplicity of metal posts each comprised of multiple layers of metal that are interfused across the bonding surface. The optical vias are formed across the bonding surface using multiplicity of optical waveguides each comprised of a dielectric material that interfuses across the bonding interface and having an index of refraction that is higher than the index of refraction of the dielectric intermediary bonding layer between the bonded wafers. The electrical and optical vias are interspersed across the bonding surface between the bonded wafers to enable uniform transfer of both electrical and optical signals between the bonded wafers.

Abstract translation: 用于接合半导体晶片的方法，其需要在接合的晶片之间并且跨接合界面传输电和光信号。 用于接合半导体晶片的方法包括在晶片接合界面内形成电和光互连通孔，以在接合的晶片之间转移电和光信号。 通过结合表面形成电通孔，使用多个金属柱，每个金属柱由跨接合表面的多层金属组成。 通过使用多个光波导形成光通孔，每个光波导由电介质材料构成，该电介质材料在接合界面之间相互连接并且具有高于接合晶片之间的电介质中间结合层的折射率的折射率 。 电通孔和光通孔穿过接合的晶片之间的结合表面，以使得能够在结合的晶片之间均匀地传递电信号和光信号。

公开(公告)号：US11538963B1

公开(公告)日：2022-12-27

申请号：US16280896

申请日：2019-02-20

Applicant: Ostendo Technologies, Inc.

Inventor： Kameshwar Yadavalli ,  JeongHyuk Park ,  Gregory Batinica ,  Andrew Teren ,  Clarence Crouch ,  Qian Fan ,  Hussein S. El-Ghoroury

IPC: H01L33/44 ,  H01L33/00 ,  H01L33/08 ,  H01L33/42 ,  H01L33/32 ,  H01L33/56 ,  H01L33/52 ,  H01L33/54

Abstract: A multilayer light emitting device having a plurality of low Si—H bonding dielectric layers is disclosed for improved p-GaN contact performance. Improved p-side contact resistance is provided using one or more bonding, via or passivation layers in a multilayer light emitting structure by the use of processes and dielectric materials and precursors that provide dielectric layers with a hydrogen content of less than 13 at. %.

公开(公告)号：US20220090266A1

公开(公告)日：2022-03-24

申请号：US17539949

申请日：2021-12-01

Applicant: Ostendo Technologies, Inc.

Inventor： Hussein El-Ghoroury ,  Kameshwar Yadavalli ,  Andrew Teren ,  Qian Fan

IPC: C23C18/20 ,  C23C18/32

Abstract: Solid state light emitting micropixels array structures having hydrogen barrier layers to minimize or eliminate undesirable passivation of doped GaN structures due to hydrogen diffusion.

公开(公告)号：US20210242372A1

公开(公告)日：2021-08-05

申请号：US17161571

申请日：2021-01-28

Applicant: Ostendo Technologies, Inc.

Inventor： Hussein S. El-Ghoroury ,  Qian Fan ,  Kameshwar Yadavalli

IPC: H01L33/30 ,  H01L33/62 ,  H01L27/15

Abstract: A III-V light emitting device with pixels (mesa regions) specifically designed to enable lower cost through layer vias is disclosed for reduced cost of manufacture of the device. Reduction of cost of manufacture is achieved by having non-uniform width trench regions formed during pixel etch for the multi-pixel array part of the device. Through-layer vias are specifically formed in the wider part of the trench regions using cheaper lithography toolset enabled by the larger via critical dimension achievable in the wider part of the trench regions (as compared to narrow part of the trench regions). Larger via critical dimension enables improved electrical (and consequently optical) performance of the device due to better overlay control as well as lower via resistance.

公开(公告)号：US10373830B2

公开(公告)日：2019-08-06

申请号：US15452005

申请日：2017-03-07

Applicant: Ostendo Technologies, Inc.

Inventor： Hussein S. El-Ghoroury ,  Minghsuan Liu ,  Kameshwar Yadavalli ,  Weilong Tang ,  Benjamin A. Haskell ,  Hailong Zhou

IPC: H01L21/67 ,  H01L21/687 ,  H01L21/66 ,  H01L21/26 ,  H01L21/18 ,  H01L21/762

Abstract: An electromagnetic wave irradiation apparatus and methods to bond unbonded areas in a bonded pair of substrates are disclosed. The unbonded areas between the substrates are eliminated by thermal activation in the unbonded areas induced by electromagnetic wave irradiation having a wavelength selected to effect a phonon or electron excitation. A first substrate of the bonded pair of substrates absorbs the electromagnetic radiation and a portion of a resulting thermal energy transfers to an interface of the bonded pair of substrates at the unbonded areas with sufficient flux to cause opposite sides the first and second substrates to interact and dehydrate to form a bond (e.g., Si—O—Si bond).