公开(公告)号：US20230268443A1

公开(公告)日：2023-08-24

申请号：US18004103

申请日：2021-10-25

Applicant: POSTECH RESEARCH AND BUSINESS DEVELOPMENT FOUNDATION

Inventor： Yong young NOH ,  Ao LIU ,  Huihui ZHU

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/417

CPC classification number: H01L29/786 ,  H01L29/66742 ,  H01L29/41733

Abstract: Disclosed is a thin-film transistor including a substrate including a gate electrode formed thereon, a gate insulating film disposed on an entire face of the substrate, a semiconductor layer disposed on an entire face of the gate insulating film, and source and drain electrodes disposed on the semiconductor layer so as to be spaced apart from each other, wherein the semiconductor layer includes cesium tin triiodide (CsSnI3) or methylammonium tin triiodide (MASnI3), wherein the semiconductor layer further contains an additive.