-
公开(公告)号：US20240351905A1
公开(公告)日：2024-10-24
申请号：US18586784
申请日：2024-02-26
Inventor： Yong-Young NOH , Youjin REO , Ao LIU , Huihui ZHU
CPC classification number: C01G19/006 , H01L29/24 , H01L29/66969 , H01L29/786 , H10K10/484 , C01P2002/34 , C01P2002/52 , C01P2006/40 , H01L21/02521 , H01L21/02631 , H10K71/164
Abstract: Proposed are a semiconductor layer including Sn-based perovskite including a chloride-based compound and an iodine-based compound, a thin film transistor including the same, and a manufacturing method thereof. The semiconductor layer includes a perovskite complex, where the perovskite complex includes a Sn-based perovskite and an additive including at least one selected from the group consisting of a first additive and a second additive, the first additive includes at least one selected from the group consisting of a chloride-based compound and an acetate-based compound, and the second additive includes an iodide-based compound (iodide). Thus, a transistor, an environmentally friendly material free of Pb, having high charge mobility and being easily industrialized, can be provided.
-
公开(公告)号：US20230268443A1
公开(公告)日：2023-08-24
申请号：US18004103
申请日：2021-10-25
Inventor： Yong young NOH , Ao LIU , Huihui ZHU
IPC: H01L29/786 , H01L29/66 , H01L29/417
CPC classification number: H01L29/786 , H01L29/66742 , H01L29/41733
Abstract: Disclosed is a thin-film transistor including a substrate including a gate electrode formed thereon, a gate insulating film disposed on an entire face of the substrate, a semiconductor layer disposed on an entire face of the gate insulating film, and source and drain electrodes disposed on the semiconductor layer so as to be spaced apart from each other, wherein the semiconductor layer includes cesium tin triiodide (CsSnI3) or methylammonium tin triiodide (MASnI3), wherein the semiconductor layer further contains an additive.
-
Search Results
2
records
(took 0.017 seconds)
