公开(公告)号：US20190319153A1

公开(公告)日：2019-10-17

申请号：US16447737

申请日：2019-06-20

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Daiki WATANABE ,  Hiroyuki YAMADA ,  Minato SENO ,  Akinori TSURUTA

IPC: H01L31/0747 ,  H01L31/0224 ,  H01L31/18

Abstract: An i-type layer is formed on a side of one surface of a crystalline semiconductor substrate. An n-type layer or a p-type layer is formed on the i-type layer and includes a conductive impurity. A TCO is formed on the n-type layer or the p-type layer. A density in a proximate portion of the n-type layer or the p-type layer closer to the TCO than a remote portion of the n-type layer or the p-type layer is smaller than a density in the remote portion.

公开(公告)号：US20190305155A1

公开(公告)日：2019-10-03

申请号：US16445225

申请日：2019-06-19

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Hiroyuki YAMADA ,  Ayumu YANO ,  Minato SENO

IPC: H01L31/032 ,  H01L31/0747 ,  H01L31/0203

Abstract: In one or more embodiments, a solar cell may include: a silicon substrate, which is crystalline; a p-doped silicon oxide layer, which may be disposed on a first principal surface of the silicon substrate and may include phosphorus as an impurity; and an amorphous silicon layer, which may be disposed on the p-doped silicon oxide layer.

公开(公告)号：US20190221684A1

公开(公告)日：2019-07-18

申请号：US16368662

申请日：2019-03-28

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Minato SENO ,  Hiroyuki YAMADA

IPC: H01L31/0236 ,  H01L31/0747 ,  H01L31/20

CPC classification number: H01L31/02363 ,  H01L31/0236 ,  H01L31/0747 ,  H01L31/202 ,  Y02E10/50

Abstract: A solar cell includes: a silicon substrate including a texture structure in a first principal surface; and a first non-crystalline silicon layer formed on the first principal surface of the silicon substrate and including recesses and protrusions reflecting the texture structure. At a valley portion in the recesses and protrusions, the first non-crystalline silicon layer includes, in the stated order: a first epitaxial layer including a crystalline region epitaxially grown on the silicon substrate; a first amorphous layer which is a non-crystalline silicon layer; and a second amorphous layer which is a non-crystalline silicon layer. The density of the first amorphous layer is less than the density of the second amorphous layer.