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公开(公告)号:US10411609B2
公开(公告)日:2019-09-10
申请号:US16207245
申请日:2018-12-03
Inventor: Junichi Yukawa , Yoshihiko Maeda , Satoshi Okawa
IPC: H02M7/00 , H02M3/335 , H03K17/687 , H03K17/0412 , H02M3/156
Abstract: The present disclosure reduces heat concentration on switching elements. A plurality of high-side transistors are connected in parallel to constitute high-side switching element. A plurality of low-side transistors are connected in parallel to constitute low-side switching element. The plurality of high-side transistors are arranged, one by one, next to the plurality of low-side transistors.