公开(公告)号：US10256863B2

公开(公告)日：2019-04-09

申请号：US15151285

申请日：2016-05-10

Applicant: QUALCOMM INCORPORATED

Inventor： Shiqun Gu ,  Chengjie Zuo ,  Steve Fanelli ,  Thomas Gee ,  Young Kyu Song

IPC: H04B1/48 ,  H01L21/84 ,  H01L23/48 ,  H01L23/60 ,  H01L23/66 ,  H01L27/12 ,  H01L29/06 ,  H01L49/02 ,  H01L21/762 ,  H01L21/768 ,  H01L23/522

Abstract: An integrated radio frequency (RF) circuit structure may include a resistive substrate material and a switch. The switch may be arranged in a silicon on insulator (SOI) layer supported by the resistive substrate material. The integrated RF circuit structure may also include an isolation layer coupled to the SOI layer. The integrated RF circuit structure may further include a filter, composed of inductors and capacitors. The filter may be arranged on a surface of the integrated RF circuit structure, opposite the resistive substrate material. In addition, the switch may be arranged on a first surface of the isolation layer.