公开(公告)号：US11614763B1

公开(公告)日：2023-03-28

申请号：US17568614

申请日：2022-01-04

Applicant: QUALCOMM Incorporated

Inventor： Debesh Bhatta ,  Sulin Li ,  Shitong Zhao ,  Hui Wang ,  John Abcarius

IPC: G05F3/26 ,  G05F1/46

Abstract: An aspect of the disclosure relates to a reference voltage generator, including: a first field effect transistor (FET) including a first threshold voltage; a second FET including a second threshold voltage different than the first threshold voltage; a gate voltage generator coupled to gates of the first and second FETs; a first current source coupled in series with the first FET between first and second voltage rails; a second current source; and a first resistor coupled in series with the second current source and the second FET between the first and second voltage rails, wherein a reference voltage is generated across the first resistor.