Reference voltage generator based on threshold voltage difference of field effect transistors

    公开(公告)号:US11614763B1

    公开(公告)日:2023-03-28

    申请号:US17568614

    申请日:2022-01-04

    Abstract: An aspect of the disclosure relates to a reference voltage generator, including: a first field effect transistor (FET) including a first threshold voltage; a second FET including a second threshold voltage different than the first threshold voltage; a gate voltage generator coupled to gates of the first and second FETs; a first current source coupled in series with the first FET between first and second voltage rails; a second current source; and a first resistor coupled in series with the second current source and the second FET between the first and second voltage rails, wherein a reference voltage is generated across the first resistor.

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