公开(公告)号：US20130316526A1

公开(公告)日：2013-11-28

申请号：US13956703

申请日：2013-08-01

Applicant: QUALCOMM Incorporated

Inventor： Shiqun Gu ,  Ratibor Radojcic ,  Yiming Li

IPC: H01L23/62

CPC classification number: H01L23/62 ,  H01L23/29 ,  H01L23/60 ,  H01L24/05 ,  H01L24/06 ,  H01L24/16 ,  H01L25/0657 ,  H01L2224/0401 ,  H01L2224/05567 ,  H01L2224/0557 ,  H01L2224/06181 ,  H01L2224/16145 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2224/05552 ,  H01L2924/00

Abstract: A voltage-switchable dielectric layer may be employed on a die for electrostatic discharge (ESD) protection. The voltage-switchable dielectric layer functions as a dielectric layer between terminals of the die during normal operation of the die. When ESD events occur at the terminals of the die, a high voltage between the terminals switches the voltage-switchable dielectric layer into a conducting layer to allow current to discharge to a ground terminal of the die without the current passing through circuitry of the die. Thus, damage to the circuitry of the die is reduced or prevented during ESD events on dies with the voltage-switchable dielectric layer. The voltage-switchable dielectric layer may be deposited on the back side of a die for protection during stacking with a second die to form a stacked IC. A method includes depositing a voltage-switchable dielectric layer on a first die between a first terminal and a second terminal.

Abstract translation: 可以在用于静电放电（ESD）保护的管芯上使用电压可切换电介质层。 电压切换介电层在芯片的正常操作期间用作模具的端子之间的介电层。 当在芯片的端子处发生ESD事件时，端子之间的高电压将可切换电压的电介质层切换成导电层，以允许电流放电到裸片的接地端，而不会流过电流通过电路的电路。 因此，在具有可电压切换介电层的管芯上的ESD事件期间，对管芯电路的损坏被减小或防止。 电压可切换电介质层可以沉积在管芯的背面上，用于在与第二管芯堆叠期间进行保护以形成堆叠的IC。 一种方法包括在第一端子和第二端子之间的第一管芯上沉积可电压切换介电层。

公开(公告)号：US08691707B2

公开(公告)日：2014-04-08

申请号：US13956703

申请日：2013-08-01

Applicant: QUALCOMM Incorporated

Inventor： Shiqun Gu ,  Ratibor Radojcic ,  Yiming Li

IPC: H01L21/31

CPC classification number: H01L23/62 ,  H01L23/29 ,  H01L23/60 ,  H01L24/05 ,  H01L24/06 ,  H01L24/16 ,  H01L25/0657 ,  H01L2224/0401 ,  H01L2224/05567 ,  H01L2224/0557 ,  H01L2224/06181 ,  H01L2224/16145 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2224/05552 ,  H01L2924/00

Abstract: A voltage-switchable dielectric layer may be employed on a die for electrostatic discharge (ESD) protection. The voltage-switchable dielectric layer functions as a dielectric layer between terminals of the die during normal operation of the die. When ESD events occur at the terminals of the die, a high voltage between the terminals switches the voltage-switchable dielectric layer into a conducting layer to allow current to discharge to a ground terminal of the die without the current passing through circuitry of the die. Thus, damage to the circuitry of the die is reduced or prevented during ESD events on dies with the voltage-switchable dielectric layer. The voltage-switchable dielectric layer may be deposited on the back side of a die for protection during stacking with a second die to form a stacked IC. A method includes depositing a voltage-switchable dielectric layer on a first die between a first terminal and a second terminal.

Abstract translation: 可以在用于静电放电（ESD）保护的管芯上使用电压可切换电介质层。 电压切换介电层在芯片的正常操作期间用作模具的端子之间的介电层。 当在芯片的端子处发生ESD事件时，端子之间的高电压将可切换电压的电介质层切换成导电层，以允许电流放电到裸片的接地端，而不会流过电流通过电路的电路。 因此，在具有可电压切换介电层的管芯上的ESD事件期间，对管芯电路的损坏被减小或防止。 电压可切换电介质层可以沉积在管芯的背面上，用于在与第二管芯堆叠期间进行保护以形成堆叠的IC。 一种方法包括在第一端子和第二端子之间的第一管芯上沉积可电压切换介电层。