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公开(公告)号:US20220081750A1
公开(公告)日:2022-03-17
申请号:US17403296
申请日:2021-08-16
Applicant: Raytheon Technologies Corporation
Inventor: Xia Tang , Paul Sheedy , Tania Bhatia Kashyap , Wayde R. Schmidt , Daniel G. Goberman
Abstract: An article includes a silicon oxycarbide-based layer that has Si, O, and C in a covalently bonded network. The silicon oxycarbide-based layer has first and second opposed surfaces. A calcium-magnesium alumino-silicate-based layer is interfaced with the first surface of the silicon oxycarbide-based layer.
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公开(公告)号:US11802093B2
公开(公告)日:2023-10-31
申请号:US16550839
申请日:2019-08-26
Applicant: RAYTHEON TECHNOLOGIES CORPORATION
Inventor: Xia Tang , Paul Sheedy , Tania Bhatia Kashyap , Wayde R. Schmidt , Daniel G. Goberman
IPC: C04B41/87 , B32B9/00 , C04B35/14 , C04B35/56 , C04B35/565 , C04B35/195
CPC classification number: C04B41/87 , B32B9/005 , C04B35/14 , C04B35/195 , C04B35/5603 , C04B35/565 , B32B2255/20 , B32B2264/102 , B32B2307/308 , B32B2307/7265
Abstract: An article includes a ceramic-based substrate and a barrier layer on the ceramic-based substrate. The barrier layer includes a matrix of barium-magnesium alumino-silicate or SiO2, a dispersion of silicon oxycarbide particles in the matrix, and a dispersion of particles, of the other of barium-magnesium alumino-silicate or SiO2, in the matrix.
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公开(公告)号:US12091756B2
公开(公告)日:2024-09-17
申请号:US17403296
申请日:2021-08-16
Applicant: Raytheon Technologies Corporation
Inventor: Xia Tang , Paul Sheedy , Tania Bhatia Kashyap , Wayde R. Schmidt , Daniel G. Goberman
CPC classification number: C23C4/12 , C23C4/04 , C23C16/32 , C23C16/401 , C23C28/04 , F01D5/288 , F16J15/453 , F05D2240/11 , F05D2240/12 , F05D2240/30 , F05D2240/35 , F05D2300/21 , F05D2300/211 , F05D2300/2261 , F05D2300/611
Abstract: An article includes a silicon oxycarbide-based layer that has Si, O, and C in a covalently bonded network. The silicon oxycarbide-based layer has first and second opposed surfaces. A calcium-magnesium alumino-silicate-based layer is interfaced with the first surface of the silicon oxycarbide-based layer.
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