公开(公告)号：US20220005804A1

公开(公告)日：2022-01-06

申请号：US17476099

申请日：2021-09-15

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Fujio SHIMIZU ,  Tsuyoshi KACHI ,  Yoshinori YOSHIDA

IPC: H01L27/02 ,  H01L21/8234 ,  H01L29/78 ,  H01L27/06 ,  H01L21/762

Abstract: A semiconductor device with an insulated-gate field-effect transistor and its manufacturing method. The cell region EFR defined in the first region of one main surface side of semiconductor substrate (SUB), an insulated gate-type field-effect transistor (MFET) is formed, the gate pad region GPR defined in the first region, snubber circuit SNC is formed snubber region SNR is defined. Within the first and second regions, first and second deep trenches spaced apart from each other are formed, and at least one width of the plurality of second deep trenches formed in the second region is smaller than that of the first deep trench formed in the first region.