公开(公告)号：US20200212176A1

公开(公告)日：2020-07-02

申请号：US16815636

申请日：2020-03-11

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Makoto KOSHIMIZU ,  Hideki NIWAYAMA ,  Kazuyuki UMEZU ,  Hiroki SOEDA ,  Atsushi TACHIGAMI ,  Takeshi IIJIMA

IPC: H01L29/06 ,  H01L21/762 ,  H01L29/78 ,  H01L29/66 ,  H01L29/423 ,  H01L27/092 ,  H01L21/8238

Abstract: A terrace insulating film (SL) to be overridden by a gate electrode (G) of an nLDMOS device is configured by LOCOS, and a device isolation portion (SS) is configured by STI. Furthermore, on an outermost periphery of an active region where a plurality of nLDMOS devices are formed, a guard ring having the same potential as that of a drain region (D) is provided. And, via this guard ring, the device isolation portion (SS) is formed in a periphery of the active region, thereby not connecting but isolating the terrace insulating film (SL) and the device isolation portion (SS) from each other.

公开(公告)号：US20190189737A1

公开(公告)日：2019-06-20

申请号：US16275469

申请日：2019-02-14

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Makoto KOSHIMIZU ,  Hideki NIWAYAMA ,  Kazuyuki UMEZU ,  Hiroki SOEDA ,  Atsushi TACHIGAMI ,  Takeshi IIJIMA

IPC: H01L29/06 ,  H01L21/762 ,  H01L21/8238 ,  H01L29/78 ,  H01L29/66 ,  H01L27/092 ,  H01L29/423

CPC classification number: H01L29/0649 ,  H01L21/76205 ,  H01L21/76224 ,  H01L21/82385 ,  H01L21/823857 ,  H01L21/823878 ,  H01L27/0922 ,  H01L29/0638 ,  H01L29/0653 ,  H01L29/0661 ,  H01L29/0696 ,  H01L29/086 ,  H01L29/0878 ,  H01L29/1083 ,  H01L29/41758 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/456 ,  H01L29/4933 ,  H01L29/665 ,  H01L29/66659 ,  H01L29/66689 ,  H01L29/7816 ,  H01L29/7835

Abstract: A terrace insulating film (SL) to be overridden by a gate electrode (G) of an nLDMOS device is configured by LOCOS, and a device isolation portion (SS) is configured by STI. Furthermore, on an outermost periphery of an active region where a plurality of nLDMOS devices are formed, a guard ring having the same potential as that of a drain region (D) is provided. And, via this guard ring, the device isolation portion (SS) is formed in a periphery of the active region, thereby not connecting but isolating the terrace insulating film (SL) and the device isolation portion (SS) from each other.