公开(公告)号：US20190319047A1

公开(公告)日：2019-10-17

申请号：US16361878

申请日：2019-03-22

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Kazuya UEJIMA ,  Kazuhiro KOUDATE

IPC: H01L27/12 ,  H03K3/356 ,  H03K19/0185 ,  H03K3/012 ,  H03K19/00

Abstract: Reduction in power consumption of a semiconductor device is achieved. The semiconductor device includes: a first circuit operating at a first power supply voltage and a second circuit operating at a second power supply voltage and including a level shift unit and a switch unit, the first circuit is configured of a low-breakdown-voltage n-type transistor that is an SOTB transistor, and the switch unit is configured of an n-type transistor that is an SOTB transistor. A second power supply voltage is higher than a first power supply voltage, and an impurity concentration of a channel formation region of the n-type transistor is higher than an impurity concentration of a channel formation region of the low-breakdown-voltage n-type transistor.

公开(公告)号：US20220189998A1

公开(公告)日：2022-06-16

申请号：US17687141

申请日：2022-03-04

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Kazuya UEJIMA ,  Kazuhiro KOUDATE

IPC: H01L27/12 ,  H03K3/356 ,  H03K19/00 ,  H03K3/012 ,  H03K19/0185

Abstract: Reduction in power consumption of a semiconductor device is achieved. The semiconductor device includes: a first circuit operating at a first power supply voltage and a second circuit operating at a second power supply voltage and including a level shift unit and a switch unit, the first circuit is configured of a low-breakdown-voltage n-type transistor that is an SOTB transistor, and the switch unit is configured of an n-type transistor that is an SOTB transistor. A second power supply voltage is higher than a first power supply voltage, and an impurity concentration of a channel formation region of the n-type transistor is higher than an impurity concentration of a channel formation region of the low-breakdown-voltage n-type transistor.

公开(公告)号：US20240171176A1

公开(公告)日：2024-05-23

申请号：US18485606

申请日：2023-10-12

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Kazuhiro KOUDATE

IPC: H03K19/003 ,  H03K17/0812 ,  H03K19/00 ,  H03K19/0185

CPC classification number: H03K19/00315 ,  H03K17/08122 ,  H03K19/0027 ,  H03K19/018507

Abstract: A breakdown-voltage control circuit includes a high voltage monitor circuit and a first voltage switching circuit 1112 connected to the high voltage monitor circuit, the high voltage monitor circuit generating a first reference signal based on an input signal inputted to the high voltage monitor circuit, the first voltage switching circuit comparing a first application voltage applied to the first voltage switching circuit with the first reference signal, outputting the first reference signal as a first control signal when the first application voltage is exceeded, and outputting the first application voltage as the first control signal when the voltage of the first reference signal is less than the first application voltage.

公开(公告)号：US20210111194A1

公开(公告)日：2021-04-15

申请号：US17131455

申请日：2020-12-22

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Kazuya UEJIMA ,  Kazuhiro KOUDATE

IPC: H01L27/12 ,  H03K3/012 ,  H03K19/0185 ,  H03K19/00 ,  H03K3/356

Abstract: Reduction in power consumption of a semiconductor device is achieved. The semiconductor device includes: a first circuit operating at a first power supply voltage and a second circuit operating at a second power supply voltage and including a level shift unit and a switch unit, the first circuit is configured of a low-breakdown-voltage n-type transistor that is an SOTB transistor, and the switch unit is configured of an n-type transistor that is an SOTB transistor. A second power supply voltage is higher than a first power supply voltage, and an impurity concentration of a channel formation region of the n-type transistor is higher than an impurity concentration of a channel formation region of the low-breakdown-voltage n-type transistor.