公开(公告)号：US20170280083A1

公开(公告)日：2017-09-28

申请号：US15470045

申请日：2017-03-27

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Ryota OTAKE ,  Tatsuya KITAMORI

IPC: H04N5/378 ,  H04N5/355 ,  H04N5/369 ,  H04N5/353

CPC classification number: H04N5/378 ,  H04N5/353 ,  H04N5/35545 ,  H04N5/3696

Abstract: In order to provide an imaging device suitable for suppressing a reduction of the frame rate without deteriorating the image quality, a sensor includes two photodiodes for receiving incident light through a microlens, a first transfer transistor that transfers the output electric charges of the first photodiode when a first transfer control signal becomes active, a second transfer transistor that transfers the output electric charges of the second photodiode when a second transfer control signal becomes active, a first output signal line that transmits a first pixel signal depending on the transferred electric charges by the first transfer transistor, and a second output signal line that transmits a second pixel signal depending on the transferred electric charges by the second transfer transistor.