-
公开(公告)号:US20170280083A1
公开(公告)日:2017-09-28
申请号:US15470045
申请日:2017-03-27
Applicant: RENESAS ELECTRONICS CORPORATION
Inventor: Ryota OTAKE , Tatsuya KITAMORI
CPC classification number: H04N5/378 , H04N5/353 , H04N5/35545 , H04N5/3696
Abstract: In order to provide an imaging device suitable for suppressing a reduction of the frame rate without deteriorating the image quality, a sensor includes two photodiodes for receiving incident light through a microlens, a first transfer transistor that transfers the output electric charges of the first photodiode when a first transfer control signal becomes active, a second transfer transistor that transfers the output electric charges of the second photodiode when a second transfer control signal becomes active, a first output signal line that transmits a first pixel signal depending on the transferred electric charges by the first transfer transistor, and a second output signal line that transmits a second pixel signal depending on the transferred electric charges by the second transfer transistor.