公开(公告)号：US20170054430A1

公开(公告)日：2017-02-23

申请号：US14877324

申请日：2015-10-07

Applicant: RF Micro Devices, Inc.

Inventor： Gernot Fattinger ,  Alireza Tajic ,  Fabien Dumont ,  Paul Stokes ,  Frida Stromqvist Vetelino

IPC: H03H9/54 ,  H03H9/17 ,  H03H3/007

CPC classification number: H03H3/02 ,  H03H9/02118 ,  H03H9/131 ,  H03H9/175 ,  H03H2003/025

Abstract: Embodiments of a Bulk Acoustic Wave (BAW) resonator having a high quality factor (Q) and methods of fabrication thereof are disclosed. In some embodiments, a BAW resonator includes a piezoelectric layer, a first electrode on a first surface of the piezoelectric layer, and a second multi-layer electrode on a second surface of the piezoelectric layer opposite the first electrode on the first surface of the piezoelectric layer. In addition, the BAW resonator includes a Border (BO) ring positioned within the second multi-layer electrode around a periphery of an active region of the BAW resonator. The BO ring is either at a position within the second multi-layer electrode between two adjacent layers of the second multi-layer electrode or at a position within the second multi-layer electrode that is adjacent to the piezoelectric layer. In this manner, the quality factor (Q) of the BAW resonator is improved.

Abstract translation: 公开了具有高质量因子（Q）的体声波（BAW）谐振器及其制造方法的实施例。 在一些实施例中，BAW谐振器包括压电层，压电层的第一表面上的第一电极和在压电层的与压电层的第一表面上的第一电极相对的第二表面上的第二多层电极 层。 此外，BAW谐振器包括围绕BAW谐振器的有源区域的周围定位在第二多层电极内的边界（BO）环。 BO环位于第二多层电极的第二多层电极中的位于第二多层电极的两个相邻层之间的位置处，或位于与压电层相邻的第二多层电极内的位置处。 以这种方式，改善了BAW谐振器的品质因子（Q）。

公开(公告)号：US09735755B2

公开(公告)日：2017-08-15

申请号：US14876426

申请日：2015-10-06

Applicant: RF Micro Devices, Inc.

Inventor： Gernot Fattinger ,  Alireza Tajic

IPC: H03H9/02 ,  H03H9/13 ,  H03H3/02 ,  H03H9/17

CPC classification number: H03H9/02157 ,  H03H3/02 ,  H03H9/02086 ,  H03H9/02118 ,  H03H9/132 ,  H03H9/171 ,  H03H9/175 ,  H03H2003/025

Abstract: Embodiments of a Bulk Acoustic Wave (BAW) resonator in which an outer region of the BAW resonator is engineered in such a manner that lateral leakage of mechanical energy from an active region of the BAW resonator is reduced, and methods of fabrication thereof, are disclosed. In some embodiments, a BAW resonator includes a piezoelectric layer, a first electrode on a first surface of the piezoelectric layer, a second electrode on a second surface of the piezoelectric layer opposite the first electrode, and a passivation layer on a surface of the second electrode opposite the piezoelectric layer, the passivation layer having a thickness (TPA). The BAW resonator also includes a material on the second surface of the piezoelectric layer adjacent to the second electrode in an outer region of the BAW resonator. The additional material has a thickness that is n times the thickness (TPA) of the passivation layer.

公开(公告)号：US20170054429A1

公开(公告)日：2017-02-23

申请号：US14876426

申请日：2015-10-06

Applicant: RF Micro Devices, Inc.

Inventor： Gernot Fattinger ,  Alireza Tajic

IPC: H03H9/54 ,  H03H9/17

CPC classification number: H03H9/02157 ,  H03H3/02 ,  H03H9/02086 ,  H03H9/02118 ,  H03H9/132 ,  H03H9/171 ,  H03H9/175 ,  H03H2003/025

Abstract: Embodiments of a Bulk Acoustic Wave (BAW) resonator in which an outer region of the BAW resonator is engineered in such a manner that lateral leakage of mechanical energy from an active region of the BAW resonator is reduced, and methods of fabrication thereof, are disclosed. In some embodiments, a BAW resonator includes a piezoelectric layer, a first electrode on a first surface of the piezoelectric layer, a second electrode on a second surface of the piezoelectric layer opposite the first electrode, and a passivation layer on a surface of the second electrode opposite the piezoelectric layer, the passivation layer having a thickness (TPA). The BAW resonator also includes a material on the second surface of the piezoelectric layer adjacent to the second electrode in an outer region of the BAW resonator. The additional material has a thickness that is n times the thickness (TPA) of the passivation layer.

Abstract translation: 体声波（BAW）谐振器的实施例，其中BAW谐振器的外部区域被设计成使BAW谐振器的有源区域的机械能的横向泄漏减少，并且其制造方法被公开 。 在一些实施例中，BAW谐振器包括压电层，压电层的第一表面上的第一电极，与第一电极相对的压电层的第二表面上的第二电极和第二电极的表面上的钝化层 电极与压电层相对，钝化层具有厚度（TPA）。 BAW谐振器还包括在BAW谐振器的外部区域中与压电层相邻的第二电极的第二表面上的材料。 附加材料的厚度为钝化层的厚度（TPA）的n倍。