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公开(公告)号：US20240364296A1
公开(公告)日：2024-10-31
申请号：US18769668
申请日：2024-07-11
发明人： Katsuya DAIMON , Akihiro IYAMA
CPC分类号： H03H9/02086 , H03H9/02031 , H03H9/02157 , H03H9/02228 , H03H9/132 , H03H9/173 , H03H9/175 , H03H9/176 , H03H9/568
摘要： An acoustic wave device includes a piezoelectric substrate including a support that includes a support substrate, and a piezoelectric layer on the support, a functional electrode on the piezoelectric layer and including a pair of electrode fingers, and a dielectric film covering the pair of electrode fingers. An acoustic reflection portion overlaps at least a portion of the functional electrode in plan view seen along a laminating direction of the support and the piezoelectric layer. Assuming a thickness of the piezoelectric layer is d and a center-to-center distance between adjacent electrode fingers is p, d/p is about 0.5 or less. A dielectric film ridge portion and an electrode finger ridge portion have a curved shape, in which a curvature radius of at least a portion of the dielectric film ridge portion is larger than a curvature radius of at least a portion of the electrode finger ridge portion.
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公开(公告)号：US12021506B2
公开(公告)日：2024-06-25
申请号：US17218725
申请日：2021-03-31
发明人： Kwang Jae Shin , Jiansong Liu , Jong Duk Han , Jae Hyung Lee , Yiliu Wang , Yosuke Hamaoka , Alexandre Augusto Shirakawa , Benfeng Zhang
CPC分类号： H03H9/205 , H03H3/02 , H03H3/04 , H03H9/02015 , H03H9/02086 , H03H9/173 , H03H9/175 , H03H9/54 , H03H9/564 , H03H9/568 , H04B1/40 , H03H2003/0442
摘要： Aspects of this disclosure relate to bulk acoustic wave resonators with patterned mass loading layers. Two different bulk acoustic wave resonators of an acoustic wave filter and/or an acoustic wave die have respective patterned mass loading layers with different densities. The patterned mass loading layers contribute to the two different bulk acoustic wave resonators having different respective resonant frequencies. Related bulk acoustic wave devices, filters, acoustic wave dies, radio frequency modules, wireless communication devices, and methods are disclosed.
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公开(公告)号：US20240186980A1
公开(公告)日：2024-06-06
申请号：US18439453
申请日：2024-02-12
发明人： Markus SCHIEBER
CPC分类号： H03H9/1071 , H03H3/02 , H03H3/08 , H03H9/02086 , H03H9/02913 , H03H9/1014 , H10N30/02 , H10N30/06 , H10N30/875 , H10N30/883
摘要： A wafer level package comprises a functional wafer with a first surface, device structures connected to device pads arranged on the first surface. A cap wafer, having an inner and an outer surface, is bonded with the inner surface to the first surface of the functional wafer. A frame structure surrounding the device structures is arranged between functional wafer and cap wafer. Connection posts are connecting the device pads on the first surface to inner cap pads on the inner surface. Electrically conducting vias are guided through the cap wafer connecting inner cap pads on the inner surface and package pads on the outer surface of the cap wafer.
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公开(公告)号：US20240039505A1
公开(公告)日：2024-02-01
申请号：US18265690
申请日：2021-12-13
发明人： Satoru ISHINO , Hiroaki YAMASHITA
CPC分类号： H03H9/02086 , H03H9/1035 , H03H9/19
摘要： A piezoelectric resonator device according to one or more embodiments may be provided, in which a crystal resonator plate includes a cutout part between a vibrating part and an external frame part, and a metal film formed on a first main surface of a first sealing member is electrically connected to an external electrode terminal formed on a second main surface, which does not face an internal space, of a second sealing member via a first internal wiring formed on an inner wall surface of the external frame part.
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公开(公告)号：US20240022227A1
公开(公告)日：2024-01-18
申请号：US18353979
申请日：2023-07-18
发明人： John P. KOULAKIS , Greg DYER
CPC分类号： H03H9/02228 , H03H9/02015 , H03H3/013 , H03H9/02086
摘要： An acoustic resonator is provided that includes a substrate; a piezoelectric layer supported by the substrate; and an interdigital transducer (IDT) at a surface of the piezoelectric layer. The IDT includes a pair of busbars and a plurality of electrode fingers extending from the first and second busbars to be interleaved with each other. The respective widths of at least a portion of the electrode fingers increases in a direction from respective first ends of the first and second busbars to the respective second end of the first and second busbars. Moreover, a pitch of the portion of the electrode fingers decreases in the direction from the respective first ends of the first and second busbar to the respective second ends of the first and second busbars.
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公开(公告)号：US20230275563A1
公开(公告)日：2023-08-31
申请号：US17913806
申请日：2021-03-18
CPC分类号： H03H9/133 , H03H9/171 , H03H9/568 , H03H9/02086 , H03H9/02015
摘要： [PROBLEM TO BE SOLVED] To provide a bulk wave resonator having a high frequency passband.
[SOLUTION] A bulk wave resonator using a bulk wave, includes a support substrate, an acoustic multilayer film that includes, stacked on the support substrate, a plurality of types of dielectrics having different acoustic impedances, a piezoelectric layer that is stacked on the acoustic multilayer film, a first electrode, and a second electrode. The first and second electrodes are disposed to face each other with a gap therebetween on a first surface of the piezoelectric layer opposite to the acoustic multilayer film, and are applied with a voltage for allowing the piezoelectric layer to generate the bulk wave. A direction that is parallel to the surface of the piezoelectric layer and in which the first electrode and the second electrode face each other is defined as a first direction. The bulk wave resonator uses, as a main mode, a bulk wave in the first direction that is generated by a thickness shear vibration in the first direction, which is excited by a parallel electric field formed in the piezoelectric layer when a voltage applied to the first electrode and the second electrode.-
公开(公告)号：US20230223912A1
公开(公告)日：2023-07-13
申请号：US18118780
申请日：2023-03-08
发明人： Katsuya DAIMON
CPC分类号： H03H9/02086 , H03H9/17 , H03H9/13
摘要： An acoustic wave device includes a piezoelectric substrate and an IDT electrode including electrode fingers. A portion of the IDT electrode in which the electrode fingers overlap with each other in a propagation direction of an acoustic wave is an intersecting region. The intersecting region includes a central region on a center side in an extending direction of the electrode fingers, and a first region and a second region located on respective sides of the central region in the extending direction of the electrode fingers. In the central region, a dielectric film is provided between the electrode fingers, and the dielectric film does not overlap with at least a portion of the electrode fingers when seen in plan view.
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8.发明申请公开(公告)号：US20180234076A1
公开(公告)日：2018-08-16
申请号：US15894021
申请日：2018-02-12
发明人： Yoshiaki Ando , Satoshi Niwa , Hiroyuki Nakamura
CPC分类号： H03H9/02086 , H03H3/02 , H03H9/1014 , H03H9/13 , H03H9/205 , H03H9/54 , H03H9/587 , H03H9/605 , H03H9/706 , H04B1/40
摘要： An acoustic resonator that prevents a radio frequency (RF) signal from being coupled to a cap substrate. An electronic device includes a first substrate (device substrate) of piezoelectric material having a top surface on which an electronic circuit including a film bulk acoustic resonator is formed, a second substrate (cap substrate) of low-resistivity material, a bottom surface of which is disposed opposing the top surface of the first substrate, and a side wall disposed between the top surface of the first substrate and the bottom surface of the second substrate. The side wall defines a cavity together with the top surface of the first substrate and the bottom surface of the second substrate, the cavity internally including the electronic circuit. A thin film of high-resistivity material is formed on at least a portion of the bottom surface of the second substrate to prevent an RF signal emitted from the electronic circuit from being coupled to the second substrate.
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公开(公告)号：US20180159508A1
公开(公告)日：2018-06-07
申请号：US15818467
申请日：2017-11-20
发明人： Taisei IRIEDA , Tokihiro NISHIHARA
CPC分类号： H03H9/706 , H03H9/02086 , H03H9/0523 , H03H9/205 , H03H9/564 , H03H9/568 , H03H9/587 , H03H9/605
摘要： A filter includes: a first substrate; first and second piezoelectric thin film resonators located on the first substrate, each of the resonators including first and second electrodes facing each other across a piezoelectric film, a crystal orientation from the first electrode to the second electrode of the piezoelectric film being the same between the resonators, the first electrodes of the resonators connecting to each other in a connection region between resonance regions where the first and second electrodes face each other across the piezoelectric film, the second electrodes of the resonators failing to connect to each other, and an area of the resonance region being approximately the same between the resonators, a second substrate mounting the first substrate across an air gap; and a ground pattern located on the second substrate and not overlapping with the first electrode located in the resonance regions and the connection region.
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公开(公告)号：US20180123555A1
公开(公告)日：2018-05-03
申请号：US15709764
申请日：2017-09-20
发明人： June Kyoo LEE
CPC分类号： H03H9/02086 , H03H9/02015 , H03H9/02543 , H03H9/54 , H03H9/587 , H03H9/605
摘要： A filter includes: a series resonator group; and a shunt resonator group disposed between the series resonator group and a ground, wherein either one or both of the series resonator group and the shunt resonator group includes a first resonator and a second resonator connected to each other in a state in which C axis directions of the first resonator and the second resonator are opposite to each other, a third resonator connected to the first resonator in series, and a fourth resonator connected to the second resonator in series.
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