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公开(公告)号：US20240258992A1
公开(公告)日：2024-08-01
申请号：US18398288
申请日：2023-12-28
Applicant: Qorvo US, Inc.
Inventor： Nadim Khlat
CPC classification number: H03H9/171 , H01Q5/335 , H03H9/02086
Abstract: Acoustic impedance tuning in a wireless transmission circuit (a.k.a. wireless device) is provided. In aspects discussed herein, the wireless transmission circuit includes an acoustic load-line tuning circuit that can be configured to adapt a load-line impedance presenting to a power amplifier circuit. In embodiments disclosed herein, the acoustic load-line tuning circuit can be dynamically controlled to provide impedance matching between a power amplifier circuit and other load-line circuits (e.g., filter circuits, antenna switch circuits, and/or antenna circuits). As a result, it is possible to reduce a signal reflection resulting from an impedance mismatch between the power amplifier circuit and the load-line circuits, thus helping to improve performance of the wireless transmission circuit.
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公开(公告)号：US12040778B2
公开(公告)日：2024-07-16
申请号：US17167909
申请日：2021-02-04
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Bryant Garcia , Robert Hammond , Patrick Turner , Neal Fenzi , Viktor Plesski , Ventsislav Yantchev
CPC classification number: H03H9/171 , H03H9/02 , H03H9/54 , H03H9/02015 , H03H9/13
Abstract: There is disclosed acoustic resonators and filter devices. An acoustic resonator includes a substrate having a surface and a piezoelectric plate having parallel front and back surfaces, the back surface attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm that spans a cavity in the substrate. An interdigital transducer (IDT) is formed on the front surface of the piezoelectric plate such that interleaved fingers of the IDT are disposed on the diaphragm. A thickness of the interleaved fingers of the IDT is greater than or equal to 0.85 times a thickness of the diaphragm and less than or equal to 2.5 times the thickness of the diaphragm.
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公开(公告)号：US20240195376A1
公开(公告)日：2024-06-13
申请号：US18209345
申请日：2023-06-13
Applicant: Spectron (Shenzhen) Technologies Co., Ltd.
Inventor： Songbin GONG , Gabriel Vidal ÁLVAREZ , Martino RAMOTTI
CPC classification number: H03H3/02 , H03H9/02102 , H03H9/131 , H03H9/171 , H03H9/176
Abstract: Discloses is an acoustic resonator and a manufacturing method thereof, which relate to the technical field of piezoelectric resonators. The manufacturing method of the acoustic resonator includes: forming a bottom laminated structure on a side of a substrate; forming a bottom electrode layer, a piezoelectric layer, and a top electrode layer on a side of the bottom laminated structure facing away from the substrate; and forming a frequency-temperature coefficient compensation layer on a side of the bottom electrode layer, the piezoelectric layer, and the top electrode layer facing away from the substrate.
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公开(公告)号：US20240063775A1
公开(公告)日：2024-02-22
申请号：US18226127
申请日：2023-07-25
Applicant: Skyworks Solutions, Inc.
Inventor： Yoshiaki Ando , Yasuyuki Saito , Hiroyuki Nakamura
IPC: H03H9/70 , H03H9/72 , H03H9/54 , H03H9/205 , H03H9/64 , H03H9/02 , H03H9/00 , H03H9/10 , H03H9/17 , H03H9/25 , H03H9/56 , H04L5/14
CPC classification number: H03H9/706 , H03H9/725 , H03H9/54 , H03H9/205 , H03H9/64 , H03H9/02007 , H03H9/542 , H03H9/0009 , H03H9/0014 , H03H9/105 , H03H9/1092 , H03H9/171 , H03H9/25 , H03H9/568 , H03H9/6483 , H03H9/703 , H03H9/72 , H04L5/14
Abstract: Multiplexers are disclosed. A multiplexer can include a first filter and a second filter that are coupled to a common node. The second filter can include a first type of acoustic wave resonators (e.g., bulk acoustic wave resonators) and a series acoustic wave resonator of a second type (e.g., a surface acoustic wave resonator) that is coupled between the acoustic wave resonators of the first type and the common node. The first filter can provide a single-ended radio frequency signal. In certain embodiments, the first filter can be a receive filter and the second filter can be a transmit filter.
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公开(公告)号：US20230353124A1
公开(公告)日：2023-11-02
申请号：US18220307
申请日：2023-07-11
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Kentaro NAKAMURA , Katsuya DAIMON
CPC classification number: H03H9/25 , H03H9/02574 , H03H9/14541 , H03H9/02559 , H03H9/171 , H03H9/64
Abstract: An acoustic wave device includes a crystal substrate, a silicon nitride film on the crystal substrate, a lithium tantalate layer on the silicon nitride film, and an interdigital transducer electrode on the lithium tantalate layer and including multiple first and second electrode fingers.
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Patent Agency Ranking
公开(公告)号：US20230336154A1
公开(公告)日：2023-10-19
申请号：US18010681
申请日：2021-06-22
Applicant: KYOCERA Corporation
Inventor： Motoki ITO
Abstract: An acoustic wave device includes a composite substrate and an excitation electrode located on an upper surface of the composite substrate. The composite substrate includes a support substrate, a multilayer film, and a piezoelectric film overlapping the upper surface of the multilayer film. The multilayer film includes a plurality of acoustic films stacked on an upper surface of the support substrate. Adjacent ones of the acoustic films in a direction in which the acoustic films are stacked are made of different materials. The excitation electrode is located on an upper surface of the piezoelectric film. A side surface of the composite substrate includes a step portion. The step portion has a step-like shape with two or more steps ascending from the support substrate side to the piezoelectric film side in a direction from an outside to an inside with respect to the side surface.
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公开(公告)号：US20230308071A1
公开(公告)日：2023-09-28
申请号：US18200013
申请日：2023-05-22
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Katsuya DAIMON
CPC classification number: H03H9/02031 , H03H9/02157 , H03H9/171 , H03H9/582 , H03H9/605
Abstract: An acoustic wave device includes a piezoelectric layer including lithium tantalate or lithium niobate, a dielectric film on the piezoelectric layer, the dielectric film including a dielectric material having a higher dielectric constant than that of the lithium tantalate or lithium niobate, and an IDT electrode on the dielectric film.
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公开(公告)号：US20230268906A1
公开(公告)日：2023-08-24
申请号：US18307024
申请日：2023-04-26
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Hirotsugu MORI , Syunsuke KIDO
CPC classification number: H03H9/205 , H03H9/6483 , H03H9/02015 , H03H9/171
Abstract: An acoustic wave filter includes a first ladder circuit including a first series arm resonator and a first parallel arm resonator, a second ladder circuit including a second series arm resonator and a second parallel arm resonator, and a third ladder circuit including a third series arm resonator and a third parallel arm resonator. The first, second and third ladder circuits are cascade-connected in order. A condition of fas1>fas2>fas3>frp1>frp2>frp3 is satisfied, where fas1 represents an anti-resonant frequency of the first series arm resonator, fas2 represents an anti-resonant frequency of the second series arm resonator, fas3 represents an anti-resonant frequency of the third series arm resonator, frp1 represents a resonant frequency of the first parallel arm resonator, frp2 represents a resonant frequency of the second parallel arm resonator, and frp3 represents a resonant frequency of the third parallel arm resonator.
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公开(公告)号：US11728781B2
公开(公告)日：2023-08-15
申请号：US17490733
申请日：2021-09-30
Applicant: Akoustis, Inc.
Inventor： Ramakrishna Vetury , Alexander Y. Feldman , Michael D. Hodge , Art Geiss , Shawn R. Gibb , Mark D. Boomgarden , Michael P. Lewis , Pinal Patel , Jeffrey B. Shealy
IPC: H04R17/00 , H03H3/02 , H03H9/02 , H03H9/05 , H03H9/10 , H03H9/13 , H03H9/56 , H03H3/04 , H03H9/17
CPC classification number: H03H3/02 , H03H3/04 , H03H9/02118 , H03H9/0514 , H03H9/1035 , H03H9/131 , H03H9/132 , H03H9/133 , H03H9/171 , H03H9/174 , H03H9/564 , H03H9/568 , H03H2003/0414 , H03H2003/0428
Abstract: A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.
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公开(公告)号：US20230170872A1
公开(公告)日：2023-06-01
申请号：US17889710
申请日：2022-08-17
Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
Inventor： Sang Heon HAN , Sang Uk SON
CPC classification number: H03H9/02015 , H03H9/02086 , H03H9/132 , H03H9/171 , H03H9/131
Abstract: A bulk-acoustic wave resonator includes a substrate, a resonance portion including a first electrode, a piezoelectric layer, and a second electrode, stacked in this order on the substrate, and a seed layer disposed below the first electrode, wherein the resonance portion includes an active portion disposed in a central portion of the resonance portion, and a lateral resonance suppressing portion disposed to surround the active portion, wherein a thickness distribution of the seed layer, the first electrode, the piezoelectric layer, and the second electrode in the lateral resonance suppressing portion is different from a thickness distribution in the active portion.
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