Bipolar Junction Transistor Optical Modulator

    公开(公告)号:US20210389612A1

    公开(公告)日:2021-12-16

    申请号:US17227457

    申请日:2021-04-12

    Abstract: Semiconductor optical modulators are described that utilize bipolar junction transistor (BJT) structure within the optical modulator. The junctions within the BJT can be designed and biased to increase modulator efficiency and speed. An optical mode may be located in a selected region of the BJT structure to improve modulation efficiency. The BJT structure can be included in optical waveguides of interferometers and resonators to form optical modulators.

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