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公开(公告)号:US20210389612A1
公开(公告)日:2021-12-16
申请号:US17227457
申请日:2021-04-12
Applicant: Rajeev J. Ram , Marc De Cea Falco , Jin Xue
Inventor: Rajeev J. Ram , Marc De Cea Falco , Jin Xue
Abstract: Semiconductor optical modulators are described that utilize bipolar junction transistor (BJT) structure within the optical modulator. The junctions within the BJT can be designed and biased to increase modulator efficiency and speed. An optical mode may be located in a selected region of the BJT structure to improve modulation efficiency. The BJT structure can be included in optical waveguides of interferometers and resonators to form optical modulators.
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公开(公告)号:US20170293230A1
公开(公告)日:2017-10-12
申请号:US15093843
申请日:2016-04-08
Applicant: Ping Liang , Jian Yang , Yongtian Wang , Wenbo Wu , Yue Liu , Jin Xue , Lei Chen , Weijian Cong
Inventor: Ping Liang , Jian Yang , Yongtian Wang , Wenbo Wu , Yue Liu , Jin Xue , Lei Chen , Weijian Cong
IPC: G03F7/20 , G02B27/00 , G02B3/00 , G02B19/00 , G02B13/16 , G02B13/14 , G02B5/09 , G02B5/00 , G02B13/00
CPC classification number: G03F7/70141 , G02B3/0056 , G02B5/005 , G02B5/09 , G02B13/0095 , G02B13/143 , G02B13/16 , G02B19/0028 , G02B19/0095 , G02B27/0012 , G03F7/705
Abstract: Provided in the present invention is an adjustment and design method of an illumination system matched with multiple objective lenses in an extreme ultraviolet lithography machine; the illumination system to which the method is applied comprises a light source, a collection lens, a field compound eye, a pupil compound eye and a relay lens group; the method specifically comprises the steps: before a projection objective lens of an extreme ultraviolet lithography machine is replaced, calculating aperture angles of emergent ray of a relay lens A on a meridian plane and a sagittal plane by means of ray tracing; after the projection objective lens of the extreme ultraviolet lithography machine is replaced, taking out a central point of a exit pupil plane as an object point for ray tracing; adjusting inclination angles and positions of the relay lens A and a relay lens B, and adjusting inclination angles of central compound eye units of the pupil compound eye and the field compound eye, till an image plane of a current illumination system approximates to an arc-shaped image plane corresponding to the projection objective lens. By adjusting the illumination system on the basis of the adjustment method of the present invention, an illumination system matched with the projection objective lens system can be obtained, which dramatically reduces the cost of designing a projection lithography machine.
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