公开(公告)号：US20180143229A1

公开(公告)日：2018-05-24

申请号：US15796995

申请日：2017-10-30

Applicant: Renesas Electronics Corporation

Inventor： Makoto SHUTO ,  Kazuyoshi KAWAI ,  Mitsuya FUKAZAWA ,  Robert NOLF ,  Robert DALBY

IPC: G01R21/133 ,  H03G3/20 ,  H03M3/00 ,  H03M1/38 ,  G01R19/252

CPC classification number: G01R21/133 ,  G01R19/252 ,  H03G3/20 ,  H03H17/0621 ,  H03M1/1205 ,  H03M1/38 ,  H03M3/458

Abstract: There is a need for high-order frequency measurement without greatly increasing consumption currents and chip die sizes. A semiconductor device includes: an electric power measuring portion that performs electric power measurement; a high-order frequency measuring portion that performs high-order frequency measurement; and a clock controller that supplies an electric power measuring portion with a first clock signal at a first sampling frequency and supplies a high-order frequency measuring portion with a second clock signal at a second sampling frequency. The second sampling frequency is higher than the first sampling frequency.