Capacitor and method for making same with high yield
    1.
    发明授权
    Capacitor and method for making same with high yield 失效
    电容器和高产量制造方法

    公开(公告)号:US4731695A

    公开(公告)日:1988-03-15

    申请号:US15478

    申请日:1987-02-17

    IPC分类号: H01G4/20 H01G4/08 H01G7/00

    CPC分类号: H01G4/20 Y10T29/435

    摘要: A capacitor comprises a pair of electrodes with an insulator between the electrodes. The insulator has a primary dielectric with at least one void. A fill dielectric is in the void to improve yield.A method of making a capacitor comprises forming a first electrode, forming a primary dielectric having a void over the electrode, forming a fill dielectric in the void, and forming a second electrode over the dielectrics.

    摘要翻译: 电容器包括在电极之间具有绝缘体的一对电极。 绝缘体具有至少一个空隙的初级电介质。 填充电介质位于空隙中以提高产率。 制造电容器的方法包括形成第一电极,在电极上形成具有空隙的主电介质,在空隙中形成填充电介质,并在电介质上形成第二电极。

    Method for fabricating via holes in a semiconductor wafer
    2.
    发明授权
    Method for fabricating via holes in a semiconductor wafer 失效
    在半导体晶片中制造通孔的方法

    公开(公告)号:US4348253A

    公开(公告)日:1982-09-07

    申请号:US320430

    申请日:1981-11-12

    摘要: A circuit pattern is formed on a front side surface of a semiconductor wafer and an apertured photoresist pattern is formed over the circuit pattern. Via holes are then formed by laser irradiating the wafer at sites corresponding to the photoresist apertures. The back side surface of the wafer is next metallized and this surface is adhered to a plating block by means of an adhesive layer. Electrical connection between the substrate and plating block is then made, the via holes are electroplated, and the substrate is separated from the plating block and adhesive layer.

    摘要翻译: 电路图案形成在半导体晶片的前侧表面上,并且在电路图案上形成有孔光致抗蚀剂图案。 然后通过在对应于光致抗蚀剂孔径的位置激光照射晶片来形成通孔。 接下来将晶片的背面表面金属化,并且该表面通过粘合剂层粘附到镀覆块。 然后制造基板和电镀块之间的电连接,电镀通孔,并且将基板与电镀块和粘合剂层分离。