摘要:
A capacitor comprises a pair of electrodes with an insulator between the electrodes. The insulator has a primary dielectric with at least one void. A fill dielectric is in the void to improve yield.A method of making a capacitor comprises forming a first electrode, forming a primary dielectric having a void over the electrode, forming a fill dielectric in the void, and forming a second electrode over the dielectrics.
摘要:
A method of precisely controlling the thickness of dielectric islands on a substrate is provided. The subject method comprises forming a patterned layer of an etchable metal over a first dielectric layer on a substrate, forming a second layer of dielectric material thereover so that there is contact where the etchable metal layer has been removed, patterning the second dielectric layer so that islands remain only over the openings in the etchable layer, removing the etchable metal layer and then patterning the first dielectric layer. There are thus provided islands of dielectric material on the substrate having a thickness equal to the first only or the first and second dielectric layers together, respectively. The process may be extended to form at least one additional layer of dielectric material on certain of the islands.
摘要:
A MEMS cassette for insertion into a DSC calorimeter and a DSC calorimeter using MEMS cassettes to conduct DSC experiments. The MEMS cassette includes a chip configured to conduct DSC reactions of a sample and reference to derive information regarding the sample.
摘要:
A chemical vapor deposition method for forming an aluminum-silicon nitride layer upon a substrate uses an aluminum precursor, a silicon precursor and a nitrogen precursor under chemical vapor deposition conditions to deposit the aluminum-silicon nitride layer upon the substrate. The aluminum-silicon nitride layer has an index of refraction interposed between silicon nitride and aluminum nitride. The aluminum-silicon nitride layer also has a bandgap from about 4.5 to about 6 eV and a permittivity from about 6×10^-11 to about 8×10^-11 F/m. The aluminum-silicon nitride layer may be further thermally annealed to reduce a hydrogen content of the aluminum-silicon nitride layer.
摘要:
A method includes executing a hypervisor (165) with computing hardware (105) to implement a virtual machine (175); responsive to detecting a removable storage medium (115) communicatively coupled to the computing hardware (105), executing a virtualized migration control appliance (180) through the hypervisor (165) separate from the virtual machine (175); and blocking the virtual machine (175) from accessing data (185) stored by the removable storage medium (115) with the virtualized migration control appliance (180) if at least one governing policy prohibits the virtual machine (175) from accessing the data (185).
摘要:
The present invention relates generally to process control systems and devices and, more particularly, to an apparatus for and a method of implementing redundant controller synchronization for bump-less failover during normal and mismatch conditions at the redundant controllers. The redundant controllers are configured to transmit state information of the process control areas of the primary controller to the backup controller that is necessary for synchronizing the redundant controllers but is not typically transmitted to other devices during the performance of process control functions. Synchronization messages are transmitted from the primary controller to the backup controller each time one of the control areas executes to perform process control functions. In other aspects, the redundant controllers are configured to determine state information at the backup controller from other process control network information during a failover of the primary controller where a mismatch condition exists between the control areas of the two controllers during the downloading of reconfigurations, and to initialize the backup controller at startup when the mismatch condition exists.
摘要:
A semiconductor structure includes a semiconductor layer that is passivated with an aluminum-silicon nitride layer. When the semiconductor layer in particular comprises a III-V semiconductor material such as a group III nitride semiconductor material or a gallium nitride semiconductor material, the aluminum-silicon nitride material provides a superior passivation in comparison with a silicon nitride material.
摘要:
A system and method for creating a plurality of denaturation curves is disclosed. In accordance with certain embodiments, one variable, such as salt content, pH or another parameter, is varied to create a plurality of different buffer solutions. Each is then used to create a denaturation graph. The plurality of denaturation graphs allows analysis of the effect of that variable on protein stability.
摘要:
A networked computing platform implements an opportunistic data communication method. The computing platform creates, at the instigation of at least one application executing on the platform, data packets for transmission over a network. The packets are created using a hierarchy of programs (‘stack’) implementing a corresponding hierarchical suite of network protocols each associated with a corresponding protocol data unit (PDU) that comprises protocol-control information for that protocol. The opportunistic communication method involves the platform waiting for creation of a packet to be instigated and thereupon setting a parameter in protocol-control information of the packet to a value indicative of a characteristic of the computing platform, this characteristic being one unconnected with functioning of the network protocols. A network monitoring method and a network administration method are also disclosed.
摘要:
A separation apparatus and method are employed using a separation channel for rotation about an axis. Such channel includes radially spaced apart inner and outer side wall portions and an end wall portion. An inlet conveys fluid into the channel. A barrier is located in the channel intermediate of the inner and outer side wall portions. A first flow path communicates between upstream and downstream sides of the barrier. A collection region may be located downstream of the barrier for communication with the first flow path. An outer side wall section of the channel may be positioned radially outward of an upstream section thereof. The barrier may join the outer side wall portion along a substantial portion of an axial length of the channel. First and second exit flow paths may allow communication with the channel either upstream or downstream of the barrier or both.