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公开(公告)号：US06287434B1
公开(公告)日：2001-09-11
申请号：US09460785
申请日：1999-12-14
IPC分类号： C25D1704
CPC分类号： C25D5/028 , Y10S204/07
摘要： A method and apparatus are provided for the electroplating on only one side of a substrate immersed in an electroplating bath using a device which holds the substrate to be plated in spaced relation to an inhibitor electrode of the device. To fabricate x-ray masks, a boron doped silicon substrate is secured to a dielectric clamp ring which clamp ring has a through opening which overlies the inhibitor electrode. A cathode structure overlies the clamp ring and the cathode structure, substrate and clamp ring are secured to the device by a pivotable, locking mechanism. A space is formed between the back side of the substrate and the surface of the inhibitor electrode so plating occurs on the surface of the inhibitor electrode. The substrate holding apparatus comprises a plate member to which the inhibitor electrode is secured. The clamp holding the substrate overlies the inhibitor electrode and a cathode structure is secured against the plate member.
摘要翻译： 提供了一种方法和装置，用于仅使用浸没在电镀浴中的基板的一侧进行电镀，该装置将待电镀的基板与装置的抑制电极间隔开。 为了制造x射线掩模，掺杂硼的硅衬底被固定到电介质夹环上，该夹环具有覆盖抑制电极的通孔。 阴极结构覆盖在夹紧环和阴极结构之间，衬底和夹环通过可枢转的锁定机构固定到装置上。 在基板的背面和抑制电极的表面之间形成空隙，从而在抑制电极的表面上发生电镀。 基板保持装置包括固定有抑制电极的板构件。 保持基板的夹具覆盖抑制电极，阴极结构固定在板件上。
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公开(公告)号：US6039858A
公开(公告)日：2000-03-21
申请号：US120774
申请日：1998-07-22
IPC分类号： C25D5/02
CPC分类号： C25D5/028 , Y10S204/07
摘要： A method and apparatus are provided for the electroplating on only one side of a substrate immersed in an electroplating bath comprising using a specially designed device which holds the substrate to be plated in spaced relation to an inhibitor electrode which is part of the device. To fabricate x-ray masks, a boron doped silicon substrate is secured to a dielectric clamp which clamp has a through opening which is positioned to overlie the inhibitor electrode. A cathode structure overlies the clamp and the cathode structure, substrate and clamp are secured to the device by preferably a pivotable, locking mechanism. A space is formed between the back side of the substrate and the surface of the inhibitor electrode so that plating is preferentially on the surface of the inhibitor electrode. The use of the method and apparatus minimizes plating on the backside of the substrate and provides a plated substrate on only the upper side of the substrate. The apparatus for holding the substrate comprises a plate member to which the inhibitor electrode is secured. The clamp holding the substrate is positioned overlying the inhibitor electrode and a cathode structure is secured against the plate member of the device and the assembled device is inserted in the electroplating bath for plating.
摘要翻译： 提供了一种方法和装置，用于仅在浸在电镀浴中的基板的一侧上进行电镀，其中包括使用专门设计的装置，其将待电镀基板与作为装置一部分的抑制电极间隔开。 为了制造X射线掩模，掺杂硼的硅衬底被固定到电介质夹具，夹具具有定位成覆盖抑制电极的通孔。 阴极结构覆盖在夹具和阴极结构之间，衬底和夹具优选地通过可枢转的锁定机构固定到装置上。 在基板的背面和抑制电极的表面之间形成空间，使得电镀优先在抑制电极的表面上。 使用该方法和装置使得在基板的背面上的电镀最小化，并且仅在基板的上侧提供镀覆的基板。 用于保持基板的装置包括固定有抑制电极的板构件。 保持基板的夹具定位在抑制器电极的上方，并且阴极结构固定在装置的板构件上，并且将组装的装置插入用于电镀的电镀浴中。
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公开(公告)号：US06521383B2
公开(公告)日：2003-02-18
申请号：US09981033
申请日：2001-10-17
IPC分类号： G03F900
摘要： A method of preparing an x-ray mask comprising providing a substrate, and applying sequentially to a surface of the substrate i) an etch stop layer resistant to etchant for an x-ray absorber, and ii) an x-ray absorber layer. The method then includes removing a portion of the substrate below the layers to create an active region of the substrate above the removed portion of the substrate and an inactive region over remaining portions of the substrate, applying a resist layer above the absorber layer, and exposing a portion of the resist layer using electron beam irradiation and developing the resist layer to form a latent mask image over the active region of the substrate. The method then includes removing the exposed portion of the resist layer to leave a resist layer mask image over the active region of the substrate, and etching the absorber layer to leave an absorber layer mask image over the designated active region of the substrate while simultaneously removing the absorber layer from the inactive region to form, for example, an x-ray mask, on the substrate.
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公开(公告)号：US06365326B1
公开(公告)日：2002-04-02
申请号：US09307126
申请日：1999-05-07
IPC分类号： G03C500
摘要： A method of preparing an x-ray mask comprising providing a substrate, and applying sequentially to a surface of the substrate i) an etch stop layer resistant to etchant for an x-ray absorber, and ii) an x-ray absorber layer. The method then includes removing a portion of the substrate below the layers to create an active region of the substrate above the removed portion of the substrate and an inactive region over remaining portions of the substrate, applying a resist layer above the absorber layer, and exposing a portion of the resist layer using electron beam irradiation and developing the resist layer to form a latent mask image over the active region of the substrate. The method then includes removing the exposed portion of the resist layer to leave a resist layer mask image over the active region of the substrate, and etching the absorber layer to leave an absorber layer mask image over the designated active region of the substrate while simultaneously removing the absorber layer from the inactive region to form, for example, an x-ray mask, on the substrate.
摘要翻译： 一种制备x射线掩模的方法，包括提供衬底，并且顺序地施加到衬底的表面上i）抗x射线吸收体的蚀刻剂的蚀刻停止层，以及ii）x射线吸收层。 该方法然后包括去除层之下的衬底的一部分以在衬底的去除部分上方形成衬底的有源区，并且在衬底的剩余部分上形成非活性区域，在吸收层上施加抗蚀剂层，并暴露 使用电子束照射的抗蚀剂层的一部分，并且使抗蚀剂层显影以在衬底的有源区上形成潜掩模图像。 该方法然后包括去除抗蚀剂层的暴露部分以在衬底的有源区上留下抗蚀剂层掩模图像，并且蚀刻吸收层以在衬底的指定有源区上留下吸收层掩模图像，同时去除 来自非活性区域的吸收层，形成例如x射线掩模。
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