Thin tantalum silicon composite film formation and annealing for use as electron projection scatterer
    1.
    发明授权
    Thin tantalum silicon composite film formation and annealing for use as electron projection scatterer 有权
    薄钽硅复合薄膜的形成和退火用作电子投射散射体

    公开(公告)号:US06696205B2

    公开(公告)日:2004-02-24

    申请号:US09745576

    申请日:2000-12-21

    IPC分类号: G03F900

    摘要: A thin transition-metal based scattering layer of a mask blank for use in EPL systems is formed by providing the thin transition-metal scattering layer directly over membrane layers on a lot of substrates, thereby forming a continuous contact between the single transition metal-based scattering layer and the membrane layer. Preferably, the single transition metal-based scattering layer is a single tantalum-silicon composite scattering layer having a stoichiometry of TaxSi. The deposition parameters for depositing the thin transition-metal based scattering layer are adjusted to provide the scattering layer uniformly over all substrates within the lot. A first substrate from the lot of substrates is then selected, an initial stress measurement of the scattering layer is determined and then the substrate is annealed at a first temperature. The stress of the scattering layer over the first annealed substrate is determined, and subsequently the anneal temperature is adjusted based on a comparison between the pre-anneal, initial stress measurement and the post-annealed stress measurement. A second substrate from the lot of substrates is then selected, annealed at the adjusted temperature, stress measurement of the scattering layer of the second substrate is determined, and the anneal temperature may once again be adjusted. The above process is repeated until a targeted stress level of the thin transition-metal based scattering layer of the mask blank has been obtained. The thin scattering layer is adapted to have final film stress controllable to within ±10% of the targeted stress.

    摘要翻译: 用于EPL系统的掩模毛坯的薄过渡金属基散射层通过在许多基底上的膜层上直接提供薄的过渡金属散射层而形成,从而在单过渡金属基 散射层和膜层。 优选地,单过渡金属基散射层是具有TaxSi的化学计量的单个钽 - 硅复合散射层。 调整用于沉积薄过渡金属的散射层的沉积参数,以在散射层内的所有衬底上均匀地提供散射层。 然后选择来自大量基板的第一基板,确定散射层的初始应力测量,然后在第一温度下退火基板。 确定第一退火衬底上的散射层的应力,然后基于预退火,初始应力测量和后退火应力测量之间的比较来调整退火温度。 然后选择来自大量基板的第二基板,在调节温度下退火,确定第二基板的散射层的应力测量,并且可以再次调整退火温度。 重复上述过程,直到获得掩模板的薄过渡金属基散射层的目标应力水平。 薄散射层适于使最终膜应力可控制在目标应力的±10%以内。

    Pattern density tailoring for etching of advanced lithographic masks

    公开(公告)号:US06521383B2

    公开(公告)日:2003-02-18

    申请号:US09981033

    申请日:2001-10-17

    IPC分类号: G03F900

    CPC分类号: G03F1/22 G03F1/84

    摘要: A method of preparing an x-ray mask comprising providing a substrate, and applying sequentially to a surface of the substrate i) an etch stop layer resistant to etchant for an x-ray absorber, and ii) an x-ray absorber layer. The method then includes removing a portion of the substrate below the layers to create an active region of the substrate above the removed portion of the substrate and an inactive region over remaining portions of the substrate, applying a resist layer above the absorber layer, and exposing a portion of the resist layer using electron beam irradiation and developing the resist layer to form a latent mask image over the active region of the substrate. The method then includes removing the exposed portion of the resist layer to leave a resist layer mask image over the active region of the substrate, and etching the absorber layer to leave an absorber layer mask image over the designated active region of the substrate while simultaneously removing the absorber layer from the inactive region to form, for example, an x-ray mask, on the substrate.

    Pattern density tailoring for etching of advanced lithographic mask
    3.
    发明授权
    Pattern density tailoring for etching of advanced lithographic mask 失效
    用于蚀刻先进光刻掩模的图案密度定制

    公开(公告)号:US06365326B1

    公开(公告)日:2002-04-02

    申请号:US09307126

    申请日:1999-05-07

    IPC分类号: G03C500

    CPC分类号: G03F1/22 G03F1/84

    摘要: A method of preparing an x-ray mask comprising providing a substrate, and applying sequentially to a surface of the substrate i) an etch stop layer resistant to etchant for an x-ray absorber, and ii) an x-ray absorber layer. The method then includes removing a portion of the substrate below the layers to create an active region of the substrate above the removed portion of the substrate and an inactive region over remaining portions of the substrate, applying a resist layer above the absorber layer, and exposing a portion of the resist layer using electron beam irradiation and developing the resist layer to form a latent mask image over the active region of the substrate. The method then includes removing the exposed portion of the resist layer to leave a resist layer mask image over the active region of the substrate, and etching the absorber layer to leave an absorber layer mask image over the designated active region of the substrate while simultaneously removing the absorber layer from the inactive region to form, for example, an x-ray mask, on the substrate.

    摘要翻译: 一种制备x射线掩模的方法,包括提供衬底,并且顺序地施加到衬底的表面上i)抗x射线吸收体的蚀刻剂的蚀刻停止层,以及ii)x射线吸收层。 该方法然后包括去除层之下的衬底的一部分以在衬底的去除部分上方形成衬底的有源区,并且在衬底的剩余部分上形成非活性区域,在吸收层上施加抗蚀剂层,并暴露 使用电子束照射的抗蚀剂层的一部分,并且使抗蚀剂层显影以在衬底的有源区上形成潜掩模图像。 该方法然后包括去除抗蚀剂层的暴露部分以在衬底的有源区上留下抗蚀剂层掩模图像,并且蚀刻吸收层以在衬底的指定有源区上留下吸收层掩模图像,同时去除 来自非活性区域的吸收层,形成例如x射线掩模。

    Optical backplane array connector
    5.
    发明授权
    Optical backplane array connector 有权
    光背板阵列连接器

    公开(公告)号:US06801693B1

    公开(公告)日:2004-10-05

    申请号:US10272694

    申请日:2002-10-16

    IPC分类号: G02B626

    摘要: An apparatus and method for forming a staircase arrangement for the connection of optical waveguides between a card and backplane. A card having optical waveguides and electrical conductors embedded in the card has an edge ending in a staircase arrangement with optical fiber-ribbons protruding from the edge. A guidance structure is connected to the edge and contains channels to guide and align the optical fiber-ribbons. A backplane having embedded optical waveguides and electrical conductors also has an edge ending in a staircase arrangement with a guidance stricture connected to the edge and tapered openings which receive and guide the optical fiber-ribbons into close proximity with the optical waveguides and forming a staircase arrangement of connected waveguides between a card and backplane.

    摘要翻译: 一种用于形成用于在卡和背板之间连接光波导的阶梯布置的装置和方法。 具有嵌入在卡中的光波导和电导体的卡具有终止于从边缘突出的光纤带的阶梯结构的边缘。 引导结构连接到边缘并且包含用于引导和对准光纤带的通道。 具有嵌入式光波导和电导体的背板还具有以阶梯结构结束的边缘,其具有连接到边缘的引导狭窄和锥形开口,其接收并引导光纤带紧密接近光波导并形成阶梯布置 在卡和背板之间连接的波导。

    Projection electron-beam lithography masks using advanced materials and membrane size
    6.
    发明授权
    Projection electron-beam lithography masks using advanced materials and membrane size 失效
    投影电子束光刻掩模采用先进的材料和膜尺寸

    公开(公告)号:US06261726B1

    公开(公告)日:2001-07-17

    申请号:US09455570

    申请日:1999-12-06

    IPC分类号: G03F900

    摘要: A stencil or scatterer mask for use with charged particle beam lithography such as projection electron-beam lithography comprises a membrane layer of a material having a Young's modulus of at least about 400 GPa and support struts supporting a surface of the membrane. The struts form and surrounding a plurality of discrete membrane areas of different aspect ratios aligned to design regions of an integrated circuit. The discrete membrane areas have different aspect ratios range from about 1:1 to about 12:1, and the discrete membrane areas have different size surface areas. The membrane is preferably silicon carbide, diamond, diamond-like carbon, amorphous carbon, carbon nitride or boron nitride. When used in scatterer masks, the ratio of discrete membrane area to membrane thickness is at least about 0.18 mm2/nm. When used in stencil masks, the ratio of discrete membrane area to membrane thickness is at least about 1.0 mm2/nm. The stencil mask is made by depositing a diamond membrane film patterned with a hardmask layer on a substrate, depositing an etch stop layer adjacent the diamond film, and forming supporting struts surrounding a plurality of discrete areas of the membrane film. The method then includes depositing a pattern over the membrane film within the discrete membrane film areas, the pattern conforming to one or more desired circuit elements, and etching the membrane film with a reactive ion etch containing oxygen to form openings in the membrane film.

    摘要翻译: 用于带电粒子束光刻(例如投影电子束光刻)的模板或散射体掩模包括具有至少约400GPa的杨氏模量的材料的膜层和支撑膜表面的支撑支柱。 支柱形成并围绕与集成电路的设计区域对准的不同纵横比的多个离散膜区域。 离散膜区域具有从约1:1至约12:1范围内的不同纵横比,并且离散膜区域具有不同尺寸的表面积。 膜优选为碳化硅,金刚石,类金刚石碳,无定形碳,碳氮化物或氮化硼。 当用于散射体掩模时,离散膜面积与膜厚度的比率至少为约0.18mm 2 / nm。 当用于模板掩模时,离散膜面积与膜厚度的比率至少为约1.0mm 2 / nm。 模板掩模通过在衬底上沉积用硬掩模层图案化的金刚石膜膜,沉积与金刚石膜相邻的蚀刻停止层,以及形成围绕膜膜的多个离散区域的支撑柱而制成。 该方法然后包括在离散膜膜区域内的膜膜上沉积图案,该图案符合一个或多个期望的电路元件,以及用包含氧的反应离子蚀刻蚀刻膜膜以在膜膜中形成开口。