公开(公告)号：US20250105834A1

公开(公告)日：2025-03-27

申请号：US18885982

申请日：2024-09-16

Applicant: ROHM CO., LTD.

Inventor： Makoto SADA ,  Katsuaki YAMADA ,  Shuntaro TAKAHASHI ,  Toru TAKUMA ,  Naoki TAKAHASHI

IPC: H03K17/082

Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes: a semiconductor substrate; a well, formed in the semiconductor substrate; an output terminal, electrically connected to the semiconductor substrate; a ground terminal, configured to receive a ground voltage; a detection signal generating circuit, configured to generate a negative current detection signal when an output voltage present at the output terminal is detected to be less than the ground voltage; and a control circuit, configured to apply the ground voltage or the output voltage to the well in response to the negative current detection signal. The detection signal generating circuit includes: a comparator, configured to generate the negative current detection signal by comparing an output detection voltage with the ground voltage or the threshold voltage; a bias circuit, configured to switch between applying the output voltage or a bias voltage as the output detection voltage; and a clamp circuit.

公开(公告)号：US20240088884A1

公开(公告)日：2024-03-14

申请号：US18465338

申请日：2023-09-12

Applicant: ROHM CO., LTD.

Inventor： Katsuaki YAMADA ,  Makoto SADA ,  Toru TAKUMA

IPC: H03K17/081 ,  B60L50/50 ,  H03K17/06 ,  H03K17/687

CPC classification number: H03K17/08104 ,  B60L50/50 ,  H03K17/063 ,  H03K17/6871

Abstract: A semiconductor device includes: a first output transistor and a second output transistor configured to be connected between a first terminal and second terminal; an active clamp circuit configured to be connected to a first control terminal of the first output transistor to limit a terminal-to-terminal voltage appearing between the first and second terminals to a clamp voltage or less; a first variable resistive element provided between a node configured to be fed with a control signal and the first control terminal; a second variable resistive element provided between the node and a second control terminal of the second output transistor; and a turn-off circuit configured to be connected to a connection node between the second variable resistive element and the second control terminal so as to be able to turn the second output transistor off.

公开(公告)号：US20240088886A1

公开(公告)日：2024-03-14

申请号：US18263404

申请日：2021-11-29

Applicant: Rohm Co., Ltd.

Inventor： Makoto SADA ,  Toru TAKUMA ,  Shuntaro TAKAHASHI

IPC: H03K17/0814 ,  H01L27/06 ,  H01L29/06 ,  H01L29/78

CPC classification number: H03K17/08142 ,  H01L27/0629 ,  H01L29/0696 ,  H01L29/7808 ,  H01L29/7813

Abstract: A semiconductor device 1 includes: a split-gate transistor 9 connected between a drain electrode 11 (output electrode OUT) and a ground electrode and having a plurality of individually controllable channel regions; an active clamp circuit 26 configured to limit the output voltage VOUT appearing at the output electrode 11 to a clamp voltage or below; and a gate control circuit 25 configured to raise the ON resistance of the split-gate transistor 9 gently (or stepwise) after the split-gate transistor is switched from the ON state to the OFF state before the active clamp circuit 26 limits the output voltage VOUT.