公开(公告)号：US10409126B2

公开(公告)日：2019-09-10

申请号：US13782823

申请日：2013-03-01

申请人： SAMSUNG DISPLAY CO., LTD. ,  KOOKMIN UNIVERSITY INDUSTRY ACADEMY COOPERATION FOUNDATION

发明人： Jihun Lim ,  Byung Du Ahn ,  Gun Hee Kim ,  Junhyun Park ,  Jehun Lee ,  Jaewoo Park ,  Dae Hwan Kim ,  Hyunkwang Jung ,  Jaehyeong Kim

IPC分类号： H01L51/10 ,  G02F1/1362 ,  G02F1/1368 ,  H01L29/417 ,  H01L29/786

摘要： A thin film transistor includes a gate electrode, a first insulating layer disposed to cover the gate electrode, a semiconductor layer disposed on the first insulating layer that includes a first side surface portion, a source electrode disposed on the semiconductor layer, and a drain electrode disposed on the first insulating layer that includes a second side surface portion. The first side surface portion makes contact with the second side surface portion.

公开(公告)号：US20130271687A1

公开(公告)日：2013-10-17

申请号：US13782823

申请日：2013-03-01

申请人： KOOMIN UNIVERSITY INDUSTRY ACADEMY COOPERATION FOUNDATION ,  SAMSUNG DISPLAY CO., LTD.

发明人： Jihun Lim ,  Byung Du Ahn ,  Gun Hee Kim ,  Junhyun Park ,  Jehun Lee ,  Jaewoo Park ,  Dae Hwan Kim ,  Hyunkwang Jung ,  Jaehyeong Kim

IPC分类号： G02F1/1368 ,  H01L29/786

CPC分类号： G02F1/1368 ,  G02F1/1362 ,  G02F1/136286 ,  H01L29/41725 ,  H01L29/41733 ,  H01L29/41783 ,  H01L29/7869 ,  H01L51/105

摘要： A thin film transistor includes a gate electrode, a first insulating layer disposed to cover the gate electrode, a semiconductor layer disposed on the first insulating layer that includes a first side surface portion, a source electrode disposed on the semiconductor layer, and a drain electrode disposed on the first insulating layer that includes a second side surface portion. The first side surface portion makes contact with the second side surface portion.

摘要翻译： 薄膜晶体管包括栅电极，设置为覆盖栅电极的第一绝缘层，设置在第一绝缘层上的半导体层，其包括第一侧表面部分，设置在半导体层上的源电极和漏电极 设置在包括第二侧表面部分的第一绝缘层上。 第一侧面部与第二侧面部接触。