公开(公告)号：US11062744B2

公开(公告)日：2021-07-13

申请号：US16262250

申请日：2019-01-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Donghun Lee ,  Daesik Moon ,  Young-Soo Sohn ,  Young-Hoon Son ,  Ki-Seok Oh ,  Changkyo Lee ,  Hyun-Yoon Cho ,  Kyung-Soo Ha ,  Seokhun Hyun

IPC: G11C7/10 ,  G06F3/06

Abstract: A memory device includes a driver that drives a data line connected with an external device, an internal ZQ manager that generates an internal ZQ start signal, a selector that selects one of the internal ZQ start signal and a ZQ start command from the external device, based on a ZQ mode, a ZQ calibration engine that generates a ZQ code by performing ZQ calibration in response to a selection result of the selector, and a ZQ code register that loads the ZQ code onto the driver in response to a ZQ calibration command from the external device.

公开(公告)号：US20230216516A1

公开(公告)日：2023-07-06

申请号：US18148510

申请日：2022-12-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Daesik Moon ,  Youngcheol Chae

IPC: H03M1/14 ,  H03M1/18 ,  H03M1/10

CPC classification number: H03M1/147 ,  H03M1/183 ,  H03M1/1009

Abstract: An apparatus configured to convert an analog input signal into a digital output signal may include a first amplification circuit configured to receive the analog input signal and a plurality of reference voltages and amplify differences between the analog input signal and the plurality of reference voltages; a plurality of first capacitors configured to respectively store charges corresponding to signals outputted by the first amplification circuit; a second amplification circuit configured to amplify differences among voltages of the plurality of first capacitors; a plurality of second capacitors configured to respectively store charges corresponding to signals outputted by the second amplification circuit; and a comparison circuit configured to generate the digital output signal by comparing voltages of the plurality of second capacitors with each other.

公开(公告)号：US12211581B2

公开(公告)日：2025-01-28

申请号：US18047614

申请日：2022-10-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Donghun Lee ,  Daesik Moon ,  Young-Soo Sohn ,  Young-Hoon Son ,  Ki-Seok Oh ,  Changkyo Lee ,  Hyun-Yoon Cho ,  Kyung-Soo Ha ,  Seokhun Hyun

IPC: G11C7/10 ,  G06F3/06 ,  G11C29/02 ,  G11C29/50

Abstract: A memory device includes a driver that drives a data line connected with an external device, an internal ZQ manager that generates an internal ZQ start signal, a selector that selects one of the internal ZQ start signal and a ZQ start command from the external device, based on a ZQ mode, a ZQ calibration engine that generates a ZQ code by performing ZQ calibration in response to a selection result of the selector, and a ZQ code register that loads the ZQ code onto the driver in response to a ZQ calibration command from the external device.

公开(公告)号：US20230066632A1

公开(公告)日：2023-03-02

申请号：US18047614

申请日：2022-10-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Donghun Lee ,  Daesik Moon ,  Young-Soo Sohn ,  Young-Hoon Son ,  Ki-Seok Oh ,  Changkyo Lee ,  Hyun-Yoon Cho ,  Kyung-Soo Ha ,  Seokhun Hyun

IPC: G11C7/10 ,  G06F3/06 ,  G11C29/02 ,  G11C29/50

Abstract: A memory device includes a driver that drives a data line connected with an external device, an internal ZQ manager that generates an internal ZQ start signal, a selector that selects one of the internal ZQ start signal and a ZQ start command from the external device, based on a ZQ mode, a ZQ calibration engine that generates a ZQ code by performing ZQ calibration in response to a selection result of the selector, and a ZQ code register that loads the ZQ code onto the driver in response to a ZQ calibration command from the external device.

公开(公告)号：US12237842B2

公开(公告)日：2025-02-25

申请号：US18148510

申请日：2022-12-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Daesik Moon ,  Youngcheol Chae

IPC: H03M1/10 ,  H03M1/14 ,  H03M1/18

Abstract: An apparatus configured to convert an analog input signal into a digital output signal may include a first amplification circuit configured to receive the analog input signal and a plurality of reference voltages and amplify differences between the analog input signal and the plurality of reference voltages; a plurality of first capacitors configured to respectively store charges corresponding to signals outputted by the first amplification circuit; a second amplification circuit configured to amplify differences among voltages of the plurality of first capacitors; a plurality of second capacitors configured to respectively store charges corresponding to signals outputted by the second amplification circuit; and a comparison circuit configured to generate the digital output signal by comparing voltages of the plurality of second capacitors with each other.

公开(公告)号：US11508420B2

公开(公告)日：2022-11-22

申请号：US17355765

申请日：2021-06-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Donghun Lee ,  Daesik Moon ,  Young-Soo Sohn ,  Young-Hoon Son ,  Ki-Seok Oh ,  Changkyo Lee ,  Hyun-Yoon Cho ,  Kyung-Soo Ha ,  Seokhun Hyun

IPC: G11C7/10 ,  G06F3/06 ,  G11C29/02 ,  G11C29/50

Abstract: A memory device includes a driver that drives a data line connected with an external device, an internal ZQ manager that generates an internal ZQ start signal, a selector that selects one of the internal ZQ start signal and a ZQ start command from the external device, based on a ZQ mode, a ZQ calibration engine that generates a ZQ code by performing ZQ calibration in response to a selection result of the selector, and a ZQ code register that loads the ZQ code onto the driver in response to a ZQ calibration command from the external device.