-
公开(公告)号:US10566066B2
公开(公告)日:2020-02-18
申请号:US16421229
申请日:2019-05-23
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Hye-Jeong So , Dong-Hwan Lee , Seong-Hyeog Choi , Eun-Chu Oh , Jun-Jin Kong , Hong-Rak Son , Pil-Sang Yoon
Abstract: A method of operating a memory controller includes classifying a plurality of memory cells in an erase state into a plurality of groups, based on erase state information about the plurality of memory cells in the erase state; setting at least one target program state for at least some memory cells from among memory cells included in at least one of the plurality of groups; and programming the at least some memory cells for which the at least one target program state has been set, to a program state other than the at least one target program state from among the plurality of program states.
-
公开(公告)号:US10706944B2
公开(公告)日:2020-07-07
申请号:US16747790
申请日:2020-01-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Hye-Jeong So , Dong-Hwan Lee , Seong-Hyeog Choi , Eun-Chu Oh , Jun-Jin Kong , Hong-Rak Son , Pil-Sang Yoon
Abstract: A method of operating a memory controller includes classifying a plurality of memory cells in an erase state into a plurality of groups, based on erase state information about the plurality of memory cells in the erase state; setting at least one target program state for at least some memory cells from among memory cells included in at least one of the plurality of groups; and programming the at least some memory cells for which the at least one target program state has been set, to a program state other than the at least one target program state from among the plurality of program states.
-
公开(公告)号:US10332606B2
公开(公告)日:2019-06-25
申请号:US15920485
申请日:2018-03-14
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Hye-Jeong So , Dong-Hwan Lee , Seong-Hyeog Choi , Eun-Chu Oh , Jun-Jin Kong , Hong-Rak Son , Pil-Sang Yoon
Abstract: A method of operating a memory controller includes classifying a plurality of memory cells in an erase state into a plurality of groups, based on erase state information about the plurality of memory cells in the erase state; setting at least one target program state for at least some memory cells from among memory cells included in at least one of the plurality of groups; and programming the at least some memory cells for which the at least one target program state has been set, to a program state other than the at least one target program state from among the plurality of program states.
-
-